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TK49N65W5,S1F-VB Product details
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Product Description
You are designing a high-power density switching power supply that must withstand the severe test of high-voltage input while maintaining a low temperature rise under high current. Ordinary high-voltage MOS tubes either have high conduction loss or insufficient surge capability. VBsemi TK49N65W5,S1F-VB is designed for this purpose – it fully integrates 650V withstand voltage, 47A current carrying capacity, and an on-resistance of only 50mΩ into the robust TO247 package, providing a solid and reliable power core for industrial-grade power supplies and new energy applications.
You are designing a high-power density switching power supply that must withstand the severe test of high-voltage input while maintaining a low temperature rise under high current. Ordinary high-voltage MOS tubes either have high conduction loss or insufficient surge capability. VBsemi TK49N65W5,S1F-VB is designed for this purpose – it fully integrates 650V withstand voltage, 47A current carrying capacity, and an on-resistance of only 50mΩ into the robust TO247 package, providing a solid and reliable power core for industrial-grade power supplies and new energy applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 50(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Withstand Voltage 650V, easily handles high-voltage bus fluctuations
Gate Drive Range ±30V, compatible with various drive schemes
Threshold Voltage 3.5V, more flexible gate drive design
On-Resistance 50mΩ (at 10V drive), significantly reduces conduction losses
Maximum Current 47A, handles high-power output with ease
Technology SJ_Multi-EPI Super Junction Structure, combining excellent switching performance and conduction characteristics
Domain and module applications：
Server/Communication Power Supply – As the main PFC or LLC switching transistor, it improves overall efficiency and reliability with low losses.
Photovoltaic Inverter – Operates stably in DC-DC boost and inverter bridge arms, aiding efficient clean energy conversion.
Electric Vehicle Charging Pile – Withstands high-voltage and high-current impacts, providing robust power support for fast charging.
Industrial Inverter/Servo Drive – Utilizes superjunction technology and low on-resistance to reduce driver temperature rise and improve overload capability.
Uninterruptible Power Supply (UPS) – Acts as a key switch in rectifier, inverter, and bypass circuits, ensuring power supply continuity for critical loads.
Energy Storage Converter (PCS) – Enables bidirectional energy conversion, extending system runtime with low losses.
High-Power Switching Power Supply Module – Replaces traditional planar structure MOS transistors, meeting high-density, high-efficiency design requirements. One-sentence summary: The TK49N65W5,S1F-VB is not an ordinary MOS transistor; it is the "efficiency engine" and "reliable cornerstone" of your high-voltage, high-power power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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