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TK49N65W,S1F-VB Product details
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Product Description
TK49N65W,S1F-VB is a Single N-MOS meticulously designed for high-voltage, high-power switching scenarios. It adopts SJ_Multi-EPI super junction technology, achieving an excellent balance between conduction loss and switching speed. The TO247 package offers superior thermal conductivity and creepage distance, making it suitable for industrial-grade high-reliability applications. The combination of 650V withstand voltage, 47A current carrying capacity, and 50mΩ on-resistance makes it an ideal core power device selection for high-voltage power supplies, inverters, and new energy systems.
TK49N65W,S1F-VB is a Single N-MOS meticulously designed for high-voltage, high-power switching scenarios. It adopts SJ_Multi-EPI super junction technology, achieving an excellent balance between conduction loss and switching speed. The TO247 package offers superior thermal conductivity and creepage distance, making it suitable for industrial-grade high-reliability applications. The combination of 650V withstand voltage, 47A current carrying capacity, and 50mΩ on-resistance makes it an ideal core power device selection for high-voltage power supplies, inverters, and new energy systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 50(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
VDS=650V: Suitable for three-phase 380V input and 400V-level bus systems, providing ample voltage margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage margin, compatible with common 12V~20V drive schemes, strong anti-interference capability, simplifying drive circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, effectively suppresses dv/dt-induced false turn-on, improving system noise immunity and switching reliability.
RDS(on)=50mΩ @ VGS=10V: Ultra-low on-resistance, greatly reduces conduction losses, lower temperature rise under full load, allowing smaller heatsink specifications and system size.
ID=47A: Ample continuous current margin, capable of handling high current surge scenarios such as motor startup and capacitor charging.
Package TO247: Through-hole mounting with short heat dissipation path and low thermal resistance, suitable for high-power continuous operation, supports multi-device parallel connection for power level expansion.
Domain and module applications：
High-Voltage Switching Power Supply: Superjunction structure reduces conduction and switching losses, improves efficiency, suitable for server power supplies, communication power supplies, and other high-efficiency requirements.
Photovoltaic Inverter: 650V withstand voltage covers single-phase/three-phase PV system bus voltage, low losses improve power conversion efficiency, extending equipment life.
Electric Vehicle Charging Pile: High current capability and low on-resistance reduce module heat generation, improving charging module power density and reliability.
Industrial Motor Drive: 50mΩ on-resistance reduces PWM output stage losses, significantly lowering driver temperature rise, suitable for frequency converters and servo drives.
UPS Uninterruptible Power Supply: Withstand voltage margin and high surge capability ensure reliability during grid switching transients, suitable for online UPS power stages.
Energy Storage Converter: Acts as an efficient switching transistor in bidirectional DC-DC/AC-DC conversion, balancing high voltage stress and low losses, contributing to energy storage system miniaturization.
High-Voltage Auxiliary Power Supply: Wide safe operating area and TO247 package adapt to harsh industrial environments, providing stable and reliable power conversion for high-voltage buses. Selection Summary: The TK49N65W,S1F-VB achieves a precise balance between high withstand voltage, high current carrying capacity, low conduction losses, and package heat dissipation capability. It is a cost-effective general-purpose choice for 650V high-voltage switching applications, especially suitable for industrial and new energy projects with strict requirements for efficiency, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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