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TK39N60W,S1VF-VB Product details
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Product Description
TK39N60W,S1VF-VB is a high-performance N-channel power MOS tube, packaged in TO247, with 650V withstand voltage and 36A current carrying capacity. Based on SJ_Multi-EPI super junction technology, the on-resistance is as low as 75mΩ (10V drive), resulting in less heat generation and higher efficiency in high-power applications. The ±30V wide gate drive range is compatible with various drive circuits, providing reliable assurance for industrial power supplies and new energy scenarios.
TK39N60W,S1VF-VB is a high-performance N-channel power MOS tube, packaged in TO247, with 650V withstand voltage and 36A current carrying capacity. Based on SJ_Multi-EPI super junction technology, the on-resistance is as low as 75mΩ (10V drive), resulting in less heat generation and higher efficiency in high-power applications. The ±30V wide gate drive range is compatible with various drive circuits, providing reliable assurance for industrial power supplies and new energy scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Withstand Voltage: 650V
Drive Voltage: ±30V
Turn-On Threshold: 3.5V
On-Resistance (10V Drive): 75 mΩ
Maximum Current: 36A
Package: TO247
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Drive Voltage: ±30V
Turn-On Threshold: 3.5V
On-Resistance (10V Drive): 75 mΩ
Maximum Current: 36A
Package: TO247
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
Switching Power Supply & PFC Circuit → High voltage, high current, low loss
Server Power Supply, Communication Power Supply → Efficient conversion, stable output
Photovoltaic Inverter → Superjunction technology, ample withstand voltage, high reliability
Motor Drive & Industrial Control → High current carrying capacity, strong impact resistance
Charging Pile & Energy Storage System → High power density, superior heat dissipation performance
DC-DC Boost/Buck Module → Low on-resistance, improves system efficiency
UPS Uninterruptible Power Supply → Fast switching, adapts to harsh operating conditions
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
