中文
English
TK35N65W5,S1F-VB Product details
Back to previous pageProduct introduction：
Product Description
You are designing a high-power switching power supply or inverter. The system needs to withstand 650V high voltage and 36A high current, while also minimizing conduction loss. Ordinary MOS tubes either have insufficient voltage withstand or high on-resistance, leading to ever-larger heatsinks. VBsemi TK35N65W5,S1F-VB is designed for this purpose – it uses SJ_Multi-EPI super junction technology to achieve 650V withstand voltage, 36A current carrying capacity, and a typical on-resistance of only 75mΩ in a TO247 package, allowing high-voltage, high-power designs to balance efficiency and reliability.
You are designing a high-power switching power supply or inverter. The system needs to withstand 650V high voltage and 36A high current, while also minimizing conduction loss. Ordinary MOS tubes either have insufficient voltage withstand or high on-resistance, leading to ever-larger heatsinks. VBsemi TK35N65W5,S1F-VB is designed for this purpose – it uses SJ_Multi-EPI super junction technology to achieve 650V withstand voltage, 36A current carrying capacity, and a typical on-resistance of only 75mΩ in a TO247 package, allowing high-voltage, high-power designs to balance efficiency and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Withstand Voltage 650V, easily handles high-voltage bus fluctuations
Gate Drive Range ±30V, compatible with various drive circuits
Threshold Voltage 3.5V, strong anti-interference capability, clear switching characteristics
On-Resistance 75mΩ (at 10V drive), significantly reduces conduction losses
Maximum Current 36A, suitable for high power density applications
Domain and module applications：
Switching Power Supply / PFC Circuit – As the main high-voltage switching transistor, it improves overall efficiency and reduces temperature rise with ultra-low on-resistance.
Photovoltaic Inverter / Energy Storage System – Utilizes 650V withstand voltage and 36A high current capability to stably handle DC bus and grid energy conversion.
Motor Driver / Industrial Inverter – Performs robustly in hard-switching topologies, reducing switching losses and electromagnetic interference.
UPS Uninterruptible Power Supply – Provides a highly reliable power conversion path to ensure continuous power supply to critical loads.
Electric Vehicle DC-DC Converter – Meets high-voltage, high-current operating conditions, enhancing the power density of the vehicle's onboard power system.
High-Power Charging Pile Module – Easily expands output power through multi-tube parallel connection while maintaining balanced heat distribution. One-sentence summary: The TK35N65W5,S1F-VB is not an ordinary MOS transistor; it is the "efficiency cornerstone" and "reliability guarantor" of your high-voltage, high-power power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
