中文
English
SIHG075N65E-GE3-VB Product details
Back to previous pageProduct introduction：
Still troubled by high conduction losses and thermal resistance in high-voltage, high-power scenarios? Let VBsemi SIHG075N65E-GE3-VB solve your problems! This TO247-packaged N-MOSFET, designed for industrial-grade high-voltage applications, features 650V withstand voltage and 36A high current capability, with an on-resistance of only 75mΩ, offering excellent conduction loss performance at the same voltage level. Utilizing SJ_Multi-EPI super-junction multi-epitaxial technology, it delivers superior switching characteristics and strong avalanche resistance, making it an ideal choice for high-reliability systems such as server power supplies, photovoltaic inverters, and charging stations.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 650V (Handles high-voltage systems with ease)
Drive Range: ±30V (Compatible with multiple gate drive solutions)
Threshold Voltage: 3.5V (Reliable turn-on at standard levels)
Ultra-Low On-Resistance: 75mΩ @ 10V (Significantly reduces conduction losses)
High Current Capability: 36A (Supports continuous high current output)
Package: TO247 (Excellent heat dissipation, suitable for high-power designs)
Technology: SJ_Multi-EPI (Superjunction structure, superior dynamic performance)
Drive Range: ±30V (Compatible with multiple gate drive solutions)
Threshold Voltage: 3.5V (Reliable turn-on at standard levels)
Ultra-Low On-Resistance: 75mΩ @ 10V (Significantly reduces conduction losses)
High Current Capability: 36A (Supports continuous high current output)
Package: TO247 (Excellent heat dissipation, suitable for high-power designs)
Technology: SJ_Multi-EPI (Superjunction structure, superior dynamic performance)
Domain and module applications：
– Core Components for High-Performance High-Voltage Systems
Switching Power Supplies: Server/telecom power supply LLC and phase-shifted full bridge, dual upgrade in efficiency and reliability
Photovoltaic Inverters: High-frequency switching for DC-AC conversion, aiding system high power density
Energy Storage and Charging Piles: High-current charge/discharge management, ample voltage margin, safe and stable
Motor Drives: Industrial inverters, servo drives, worry-free high-voltage high-power output
UPS Uninterruptible Power Supplies: Mains and battery switching, strong surge resistance
Electric Vehicle Auxiliary Systems: On-board DC-DC, motor drive control, automotive-grade quality assurance
Industrial High-Voltage Conversion: High-performance scenarios such as industrial control, welding equipment, medical power supplies SIHG075N65E-GE3-VB – High voltage, high current, efficiency and robustness combined, making your power design more competitive!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
