中文
English
SIHG110N65SF-GE3-VB Product details
Back to previous pageProduct introduction：
Still troubled by high losses and difficult heat dissipation in high-voltage systems? Let VBsemi SIHG110N65SF-GE3-VB solve your problems! This TO247-packaged high-voltage N-MOSFET, using SJ_Multi-EPI super-junction technology, combines 650V withstand voltage with an ultra-low on-resistance of 80mΩ, and a 34A high current delivery capability to handle demanding power scenarios. Compared to traditional planar technology, it offers lower switching losses and reduced conduction heating, making it the "power champion" for high-efficiency applications such as server power supplies, photovoltaic inverters, and charging stations.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 650V (Ample margin for high-voltage systems, safe and reliable)
Drive Range: ±30V (Compatible with common 12V/15V gate drive solutions)
Threshold Voltage: 3.5V (Moderate threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 80mΩ @ 10V (Significantly reduces conduction losses)
High Current Capability: 34A (TO247 package offers excellent heat dissipation, stable continuous output)
Package: TO247 (Through-hole mounting, suitable for high-power PCB layout)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial Process, excellent dynamic characteristics)
Drive Range: ±30V (Compatible with common 12V/15V gate drive solutions)
Threshold Voltage: 3.5V (Moderate threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 80mΩ @ 10V (Significantly reduces conduction losses)
High Current Capability: 34A (TO247 package offers excellent heat dissipation, stable continuous output)
Package: TO247 (Through-hole mounting, suitable for high-power PCB layout)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial Process, excellent dynamic characteristics)
Domain and module applications：
– Five High-Voltage Scenarios, One Core
Switching Power Supplies: Efficient LLC / Phase-Shifted Full Bridge topology, improves overall system efficiency
Photovoltaic Inverters: MPPT power tracking, high voltage tolerance, low temperature rise
Charging Pile Modules: High-current rectification and DC-DC conversion, stable and reliable
Motor Drives: Industrial inverters, servo drives, low high-frequency switching losses
UPS Uninterruptible Power Supplies: Mains and battery switching, strong overload capacity SIHG110N65SF-GE3-VB – High voltage, high current, low resistance, high efficiency, making your power design more competitive!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
