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TK14N65W5,S1F-VB Product details
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Still struggling with high switching losses and heat dissipation design in high-power, high-voltage applications? Let VBsemi TK14N65W5,S1F-VB solve your problems! This TO247-packaged N-MOSFET, with 650V high withstand voltage and 15A high current capability, easily handles various high-voltage power conversion scenarios. With an on-resistance of only 300mΩ @ 10V, combined with SJ_Multi-EPI super-junction multi-epitaxial technology, it achieves an excellent balance between switching and conduction losses, making it a "reliable choice" for high-voltage, high-efficiency designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 650V (High-voltage application, ample margin)
Drive Range: ±30V (Compatible with common high-voltage gate drive solutions)
Threshold Voltage: 3.5V (Works with standard drives, crisp turn-on)
On-Resistance: 300mΩ @ 10V (Low conduction loss)
High Current Capability: 15A (TO247 package offers significant heat dissipation advantage)
Package: TO247 (Suitable for high power density design, easy to mount heatsink)
Technology: SJ_Multi-EPI Superjunction Multi-Epitaxial Process (Low on-resistance, high switching speed)
Drive Range: ±30V (Compatible with common high-voltage gate drive solutions)
Threshold Voltage: 3.5V (Works with standard drives, crisp turn-on)
On-Resistance: 300mΩ @ 10V (Low conduction loss)
High Current Capability: 15A (TO247 package offers significant heat dissipation advantage)
Package: TO247 (Suitable for high power density design, easy to mount heatsink)
Technology: SJ_Multi-EPI Superjunction Multi-Epitaxial Process (Low on-resistance, high switching speed)
Domain and module applications：
– Five High-Power Scenarios, One Solution
Switching Power Supplies: High-voltage DC-DC converters, LLC resonant power supplies, efficiency and stability combined
Charging Piles and Photovoltaic Inverters: High voltage tolerance, high current, aiding new energy conversion
Industrial Drives: Motor drivers, auxiliary power supplies, impact resistant, highly reliable
Power Factor Correction (PFC): Reduces harmonic losses, improves system power factor
High-Frequency High-Voltage Circuits: UPS, telecom power supplies, etc., fast switching, lower temperature rise TK14N65W5,S1F-VB – High voltage tolerance, high current, making your power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
