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TK14C65W5,S1Q-VB Product details

Product introduction:

TK14C65W5,S1Q-VB is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios, using SJ_Multi-EPI super junction technology to balance low conduction losses and high switching speed. The TO262 package offers excellent heat dissipation and overcurrent capability. The combination of 650V voltage resistance, 13A current-carrying capacity, and 330mΩ on-resistance makes it a reliable choice for high-voltage applications such as switching power supplies, PFC circuits, and industrial drives, especially suitable for systems with high requirements for voltage resistance and thermal reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-N 650V 3.5V 13A 330(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO262 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO262 Single-N 650V 3.5V 13A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO262 Single-N 650V 3.5V 13A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO262 Single-N

VDS=650V: Covers three-phase rectified, industrial bus, and home appliance high-voltage bus scenarios, with ample peak voltage margin to effectively withstand avalanche breakdown risk.
VGS=±30V: Wide gate drive window, compatible with various PWM controllers and driver ICs, reducing false turn-on risk and enhancing system noise immunity.
Vth=3.5V: Typical threshold voltage is moderate, balancing noise immunity and drive compatibility, suitable for standard 12V~15V gate drive circuits.
RDS(on)=330mΩ @ VGS=10V: Superjunction structure achieves low on-resistance, minimizing full-load conduction loss and helping improve power conversion efficiency.
ID=13A: Sufficient continuous current capability, handling common power stage loads such as high-voltage DC-DC converters, chargers, and motor control.
Package TO262: Fully encapsulated design facilitates heatsink mounting, low thermal resistance, high reliability under long-term high-load operation, suitable for industrial-grade applications.

Domain and module applications:


Switching Power Supply (SMPS): High-voltage superjunction MOSFET reduces switching and conduction losses, improving light-load and full-load efficiency, suitable for 85~265V wide voltage input.
Power Factor Correction (PFC) Circuits: 650V withstand voltage and fast switching characteristics meet the needs of Continuous Conduction Mode (CCM) PFC, helping the system pass harmonic standards.
Chargers and Adapters: 13A current margin supports high-power output, low RDS(on) reduces rectification stage heat generation, beneficial for high-density power supply design.
Industrial Motor Drives: High withstand voltage and robust thermal performance are suitable for auxiliary power supplies of three-phase 380V systems and low-power frequency converters, improving the long-term reliability of the drive module.
Photovoltaic Inverter Auxiliary Power Supplies: Wide voltage range and surge resistance adapt to photovoltaic bus fluctuations, ensuring stable auxiliary power supply.
Welding Machines and Cutting Power Supplies: Low high-frequency switching losses, combined with TO262 heat dissipation package, meet the demanding continuous operation requirements of industrial sites.
High-Voltage DC-DC Converters: Used as a main switch tube or clamping tube, the superjunction process provides excellent dv/dt immunity, enhancing converter robustness. Selection Summary: TK14C65W5,S1Q-VB achieves a scientific balance between high voltage withstand, on-resistance, and package heat dissipation capability, making it a cost-effective general-purpose choice for 650V high-voltage switching applications, particularly suitable for power supply and industrial projects with clear requirements for efficiency, thermal reliability, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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