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FQI8N60CTU-VB Product details
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FQI8N60CTU-VB is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios, using SJ_Multi-EPI super junction technology to achieve an excellent balance between on-resistance and switching losses. The TO262 package offers good heat dissipation and overcurrent-carrying capacity, suitable for medium-to-high power conversion and industrial control applications. The combination of 650V voltage resistance, 13A current-carrying capacity, and 330mΩ on-resistance makes it a reliable power device choice for high-voltage switching power supplies, inverters, and auxiliary power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 13A | 330(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
VDS=650V: Covers 380V AC rectified, three-phase industrial input and other high-voltage applications, with sufficient peak voltage margin to enhance system avalanche capability.
VGS=±30V: Wide gate drive voltage window, compatible with various PWM controllers and driver ICs, reducing false turn-on risk and enhancing drive design flexibility.
Vth=3.5V (Typical): Moderate threshold voltage with strong anti-interference capability, suitable for standard high-voltage gate drive circuits, avoiding noise-induced false turn-on.
RDS(on)=330mΩ @ VGS=10V: Superjunction technology significantly reduces conduction loss at high voltage, improving full-load efficiency and helping reduce heatsink size.
ID=13A: Ample continuous current capability, capable of driving most medium-power inductive loads and switching power supply primary sides.
Package TO262: Fully encapsulated plastic structure, easy to install, low thermal resistance, suitable for high-current PCB layouts requiring enhanced heat dissipation or through-hole soldering.
Domain and module applications：
Switching Power Supply (SMPS): The high-voltage superjunction structure reduces conduction and switching losses, suitable for main switch tubes in topologies such as flyback and LLC.
Charging Pile and Adapter Auxiliary Power Supply: 650V withstand voltage combined with low loss characteristics improves conversion efficiency under wide voltage input and enhances reliability.
Inverters and Motor Drives: The built-in fast recovery diode characteristics are suitable for bridge circuits, reducing commutation losses and improving motor control stability.
Industrial Control and PLC Power Modules: High voltage margin and robust SOA characteristics adapt to complex grid environments and surge impacts.
DC/DC Converters (High-Voltage Side): Used as the main switch tube in high-voltage input step-down applications, effectively reducing conduction losses and simplifying thermal design.
LED Lighting Drives (High Voltage): Suitable for the power stage in constant current and constant voltage circuits, with high voltage capability ensuring stable support for LED strings.
Uninterruptible Power Supplies (UPS) and Photovoltaic Inverters: The superjunction process brings low gate charge and low on-resistance, aiding efficient power conversion. Selection Summary: FQI8N60CTU-VB offers a balanced performance across high voltage withstand, conduction loss, package reliability, and cost, making it a preferred power device for 650V high-voltage switching applications, especially suitable for power supply and industrial control projects with strict requirements for efficiency, temperature rise, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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