中文
English
FQI12N60TU-VB Product details
Back to previous pageProduct introduction：
Still worried about conduction losses and heat dissipation in high-voltage, high-power applications? VBsemi FQI12N60TU-VB is here to help! This TO262-packaged N-MOSFET, using SJ_Multi-EPI super junction technology, easily handles industrial and power supply scenarios with 650V high voltage resistance and a solid 12A continuous current capability. With a low on-resistance of 360mΩ, it significantly reduces conduction losses. The super junction structure enables faster switching speeds and better FOM values, making it a 'hardcore choice' for high-voltage, high-efficiency designs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 12A | 360(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Voltage Rating: 650V (High voltage margin, stable and reliable)
Drive Range: ±30V (Compatible with 10V/15V and other gate drives)
Turn-On Threshold: 3.5V (Controllable by standard logic levels)
On-Resistance: 360mΩ @ 10V (Low loss, high efficiency)
Continuous Current: 12A (Strong current carrying capability)
Package: TO262 (Easy heat dissipation, suitable for power board design)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial process, excellent switching characteristics)
Drive Range: ±30V (Compatible with 10V/15V and other gate drives)
Turn-On Threshold: 3.5V (Controllable by standard logic levels)
On-Resistance: 360mΩ @ 10V (Low loss, high efficiency)
Continuous Current: 12A (Strong current carrying capability)
Package: TO262 (Easy heat dissipation, suitable for power board design)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial process, excellent switching characteristics)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supplies: LLC half-bridge, active PFC, dual enhancement of efficiency and reliability
Industrial Power Supplies: Electrical cabinet auxiliary power supplies, servo drives, voltage withstand and impact resistance
Charging Pile Modules: High-voltage DC-DC conversion, aiding high power density design
Photovoltaic Inverters: Bus voltage conversion, stable output, reduced temperature rise
Motor Drives: High-voltage BLDC/PMSM drive, low power consumption, fast response
UPS Uninterruptible Power Supplies: Critical load power supply guarantee, adapting to harsh operating conditions. FQI12N60TU-VB – High voltage, high efficiency, stable as a rock, making your power system more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
