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FQI10N60CTU-VB Product details
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VBsemi FQI10N60CTU-VB is a Single N-channel power MOSFET using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, designed for high-voltage power conversion and industrial-grade power control scenarios. Its TO262 package offers good heat dissipation and current-carrying reliability, suitable for medium-to-high power density circuit layouts. The device provides stable switching characteristics within a 650V drain-source voltage range, with a wide gate drive voltage range of ±30V and a typical threshold voltage of 3.5V, allowing flexible adaptation to various drive schemes for easy system design and integration.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 12A | 360(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 360mΩ (Typical)
- Maximum Drain Current (ID): 12A
- Package: TO262
- Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 360mΩ (Typical)
- Maximum Drain Current (ID): 12A
- Package: TO262
- Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
Domain and module applications：
1. Switching Power Supply (SMPS): Used for high-voltage DC-DC converters and AC-DC power supply main switch tubes, leveraging the low on-resistance and high withstand voltage characteristics of the superjunction process to reduce losses and improve conversion efficiency.
2. Power Factor Correction (PFC) Circuits: Suitable for Boost PFC topologies as high-frequency switching devices, achieving high power factor and low harmonic distortion, meeting industrial and communication power supply needs.
3. Uninterruptible Power Supplies (UPS): Used as power switches in the inverter stage and bypass circuit of online UPS, supporting high-voltage bus voltage and ensuring stable system operation.
4. Photovoltaic Inverters: Used in the DC-AC conversion stage of distributed photovoltaic string inverters, with sufficient voltage margin to adapt to bus voltages above 400V, improving power generation efficiency.
5. Motor Drives and Industrial Control: Drives loads such as three-phase asynchronous motors and high-voltage permanent magnet synchronous motors, cooperating with PWM control to achieve speed regulation and energy saving, widely used in frequency converters and servo drive systems.
6. High-Voltage Charging Pile Power Modules: Used as switching tubes in LLC or phase-shifted full-bridge topologies of charging modules, withstanding high input voltage to ensure reliable and efficient high-power charging.
7. Auxiliary Power Supplies and High-Voltage Distribution Systems: Applied in auxiliary power circuits of industrial control boards, smart grid terminals, and other equipment, providing stable high-voltage switching solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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