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BUK7E2R7-30B,127-VB Product details
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VBsemi BUK7E2R7-30B,127-VB is a Single N-channel field-effect transistor, part of the VBsemi brand product series. This product features extremely low on-resistance and excellent current carrying capability, suitable for high power density, high efficiency power conversion and control applications. Manufactured using advanced Trench technology, it has a drain-source voltage (VDS) of 30V and operates stably within a gate-source voltage (VGS) range of ±20V. The product is packaged in TO262, suitable for industrial-grade applications requiring good heat dissipation and reliable connections.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | 3.24(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 3.24 mΩ
- On-Resistance (VGS=10V): 2 mΩ
- Maximum Drain Current (ID): 150A
- Package Type: TO262
- Technology: Trench
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 3.24 mΩ
- On-Resistance (VGS=10V): 2 mΩ
- Maximum Drain Current (ID): 150A
- Package Type: TO262
- Technology: Trench
Domain and module applications：
1. High-Power DC-DC Converters: The BUK7E2R7-30B,127-VB is suitable for synchronous rectification and switching circuits in servers, communication equipment, and industrial power supplies. With its ultra-low 2mΩ on-resistance, it can significantly reduce conduction losses and improve conversion efficiency.
2. Motor Drive Modules: This device is suitable for low-voltage high-current motor drives, such as power tools, e-bikes, and robot joint motors. It can effectively control motor start/stop, forward/reverse, and speed regulation, meeting high current surge requirements.
3. Battery Protection and Management Systems: In lithium battery charge/discharge protection circuits, the BUK7E2R7-30B,127-VB can be used as a high-side or low-side switching element to precisely control charge/discharge current, ensuring safe battery pack operation and extending service life.
4. Automotive Electronics Systems: Suitable for applications such as on-board power distribution, body control modules, and LED automotive lighting drivers. Its 150A high current capability and TO262 package can handle the severe thermal stress and vibration requirements of automotive environments.
5. Power Adapters and Fast Charging Solutions: In high-voltage to low-voltage circuits like laptop adapters and USB PD fast chargers, this product can be used for secondary-side rectification and load switching, helping to achieve miniaturized, high-efficiency power designs.
6. Power Tools and Garden Machinery: For high-load startup and high-power output scenarios, this MOSFET provides extremely low conduction voltage drop and excellent heat dissipation performance, making it suitable as a power stage switching device for brushless motor controllers.
7. Energy Storage and Inverter Systems: In portable energy storage power supplies, UPS, and low-voltage inverters, the BUK7E2R7-30B,127-VB can be used for battery-side switching and power conversion stages, ensuring stable system operation under high current conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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