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FX70KMJ-03#B00-VB Product details

Product introduction:

FX70KMJ-03#B00-VB is a Single P-MOSFET deeply optimized for low-voltage, high-current power switching scenarios. Trench technology balances low conduction loss and high switching speed, while the TO220F package provides good heat dissipation and insulation installation convenience. With a 30V withstand voltage, -55A current capacity, and 11mΩ on-resistance, it offers significant advantages in high-current applications such as battery protection, power management, and motor drives, especially suitable for power path designs requiring low internal resistance and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-P -30V -2.5V -55A 13(mΩ) 11(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-P -30V -2.5V -55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-P -30V -2.5V -55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-P

VDS=-30V: Suitable for 5V/12V/24V systems, with sufficient negative voltage margin to reduce the risk of voltage spike breakdown caused by load transients.
VGS=±20V: Wide gate drive range, compatible with common PWM controllers and logic levels, simplifying drive circuit design.
Vth=-2.5V (Typical): Moderate threshold voltage, effectively preventing false turn-on while ensuring full conduction under common drive voltages.
RDS(on)=11mΩ @ VGS=10V: Ultra-low on-resistance, minimal conduction loss at full load, significantly reducing temperature rise and improving system efficiency.
ID=-55A: Strong continuous current capability, capable of withstanding high current surges, suitable for high power density applications.
Package TO220F: Fully encapsulated insulation design, excellent heat dissipation, no additional insulation pad required, easy for installation and mass production.

Domain and module applications:



Application Areas and Modules
Battery Protection Module: Extremely low on-resistance reduces self-heating of the protection board; high current switching capability meets the needs of power batteries and energy storage systems.
Power Reverse Connection Protection: P-MOS high-side drive architecture is naturally suitable for reverse connection protection circuits; low voltage drop improves overall system efficiency.
Motor Drive Control: Low PWM switching losses; high current carrying capacity ensures smooth motor operation; significantly reduced controller temperature rise.
Low Voltage High Current Switch: Suitable for on/off control of high-power loads such as power tools and automotive electronics; high reliability.
DC-DC Converter: Replaces Schottky diodes in load switch and synchronous rectification applications, effectively reducing on-voltage drop and improving heavy-load efficiency.
Automotive Auxiliary Power Supply: Wide voltage margin and TO220F insulated package, suitable for 12V/24V automotive bus environments; strong surge immunity. Selection Summary: The FX70KMJ-03#B00-VB achieves an excellent balance between on-resistance, current capability, and package heat dissipation. It is a high-performance general-purpose choice for 30V low-voltage, high-current P-MOS switching applications, especially suitable for power system designs with strict requirements for high current, low temperature rise, and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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