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TK12A80W,S4X-VB Product details
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VBsemi TK12A80W,S4X-VB is a Single N-channel MOSFET using SJ_Multi-EPI (super-junction multi-epitaxial) technology, designed for high-voltage power conversion and high-efficiency switching applications. Its TO220F fully molded package offers excellent insulation and heat dissipation, suitable for medium-to-high power supply modules and industrial control scenarios. The device provides stable and reliable switching characteristics within an 800V drain-source voltage range, with a gate drive compatible with common 12V/15V drive circuits, facilitating system design integration. The super-junction structure significantly reduces conduction and switching losses, helping to improve overall conversion efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | 480(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (typical)
- On-Resistance (VGS=10V): 480mΩ (typical)
- Max Drain Current (ID): 11A
- Package: TO220F
- Technology: SJ_Multi-EPI (Superjunction multi-epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (typical)
- On-Resistance (VGS=10V): 480mΩ (typical)
- Max Drain Current (ID): 11A
- Package: TO220F
- Technology: SJ_Multi-EPI (Superjunction multi-epitaxial)
Domain and module applications：
1. Switching Power Supply (SMPS): Used as a high-side main switch tube to reduce switching loss, suitable for adapter, charger, and industrial power supply designs.
2. Power Factor Correction (PFC) Circuit: Serves as a boost PFC switching device to improve power factor and overall efficiency, suitable for server power supplies and communication power supplies.
3. LED Lighting Drive: Used in high-voltage constant current drive modules to achieve stable current output and suppress flicker, suitable for road lighting and industrial lighting.
4. High-Voltage DC-DC Converter: Applied in the auxiliary power supply or front-end conversion circuit of photovoltaic inverters and energy storage systems to improve conversion efficiency.
5. Industrial Motor Drive: Drives high-voltage small motors and loads like fans and water pumps, supporting PWM speed control and ensuring system reliability.
6. Home Appliance Power Board: Integrated into the variable frequency control boards of air conditioners, refrigerators, washing machines, etc., to achieve efficient power conversion and management.
7. Uninterruptible Power Supply (UPS): Used in inverter bridge arms or bypass switches to handle high-voltage transient surges and improve system durability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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