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FCPF4300N80Z-VB Product details
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What does a high-voltage system fear most? High switching loss, insufficient voltage margin, and difficult thermal design! VBsemi FCPF4300N80Z-VB is here to help! This TO220F packaged N-MOSFET, designed for 800V high-voltage applications, utilizes SJ_Multi-EPI superjunction technology, offering a low on-resistance of 1100mΩ, excellent switching characteristics, and superior loss control. With a 5A continuous current capability and a fully isolated package, it makes your power supply design safer, more reliable, and more worry-free.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 800V (High voltage application, ample margin)
Drive Range: ±30V (Compatible with various drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 1100mΩ @ 10V (Low conduction loss, minimal heat generation)
Continuous Current: 5A (Suitable for medium power requirements)
Package: TO220F (Fully molded isolation, good heat dissipation, easy installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy Process, superior figure of merit)
Drive Range: ±30V (Compatible with various drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 1100mΩ @ 10V (Low conduction loss, minimal heat generation)
Continuous Current: 5A (Suitable for medium power requirements)
Package: TO220F (Fully molded isolation, good heat dissipation, easy installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy Process, superior figure of merit)
Domain and module applications：
— One Chip for Six High-Voltage Scenarios
Switching Power Supply: LLC half-bridge, active PFC, high efficiency, low temperature rise
Industrial Control: Servo drive auxiliary power, inverter high-voltage side, stable and reliable
Photovoltaic Inverter: DC-DC boost stage, high withstand voltage, strong anti-surge capability
Electric Vehicle Charger: High-voltage bus switch, low loss, high safety
High-Voltage Auxiliary Power Supply: Home appliance drive, instrument power supply, adapts to wide voltage input
Communication Power Supply: High-voltage rectifier stage, fast switching speed, more compact system FCPF4300N80Z-VB — High withstand voltage, low loss, making your high-voltage power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
