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TK090A65Z,S4X-VB Product details
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VBsemi TK090A65Z,S4X-VB is a Single N-channel power field-effect transistor using SJ_Multi-EPI (Superjunction Multi-Epitaxial) technology, designed for high-voltage power conversion and industrial-grade applications. Its TO220F fully isolated package offers good heat dissipation and ease of installation, suitable for medium-to-high-power PCB layouts and systems requiring insulation. The device provides stable and reliable switching characteristics at a 600V drain-source voltage, with a typical on-resistance as low as 85mΩ (VGS=10V), effectively reducing conduction losses; it also supports a wide ±30V gate drive range, facilitating matching with different control circuits and enhancing system design flexibility.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 32A | 85(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 85mΩ (Typical)
- Maximum Drain Current (ID): 32A
- Package: TO220F
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 85mΩ (Typical)
- Maximum Drain Current (ID): 32A
- Package: TO220F
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Domain and module applications：
1. Switching Power Supply (SMPS): Used in high-voltage DC-DC converters, AC-DC adapters, and server power supplies, leveraging super-junction structure for low loss and high-efficiency power conversion.
2. Power Factor Correction (PFC) Circuit: As a boost switch, suitable for 600V class Boost PFC, improving power utilization and reducing harmonic interference.
3. Photovoltaic Inverter and Energy Storage System: Completes power conversion on the DC bus side, supporting small size and high power density design, enhancing system reliability.
4. Industrial Motor Drive: Used in the power stage of three-phase inverters, servo drives, and industrial fans/pumps, supporting high-frequency PWM control for smooth speed regulation.
5. UPS Uninterruptible Power Supply: As a rectifier/inverter stage switching device, ensuring fast switching during mains abnormalities and providing stable output.
6. Electric Vehicle Charging Pile (Auxiliary Power/Main Switch): Suitable for high-voltage auxiliary switch circuits or the power stage of charging modules, meeting high current and high withstand voltage requirements.
7. High-Voltage Lighting Driver: Used for LED street lights or professional lighting power supplies, achieving high reliability and long life with constant current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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