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TK20A60U(Q,M)-VB Product details
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You are designing a high-power-density switching power supply that must withstand 600V high-voltage input while staying cool under 20A high current. Ordinary MOS transistors either lack sufficient voltage resistance or suffer from high conduction losses. The VBsemi TK20A60U(Q,M)-VB is precisely designed for this—it uses advanced multi-epitaxial super junction technology, perfectly packaging 600V voltage resistance, 20A continuous current capability, and a maximum on-resistance of only 150mΩ in a TO220F fully isolated housing, making high-voltage and high-current design no longer a compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | 150(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- 600V Voltage Rating, easily handles wide input voltage range and surge spikes
- ±30V Gate Drive Range, compatible with various drive circuit designs
- 3.5V Threshold Voltage, stable turn-on with standard gate drive
- 150mΩ On-Resistance (@VGS=10V), significantly reduces conduction loss
- 20A Maximum Current, TO220F package can also handle high current
- Superjunction Multi-Epitaxial Process (SJ_Multi-EPI), optimizes balance between conduction and switching performance
- ±30V Gate Drive Range, compatible with various drive circuit designs
- 3.5V Threshold Voltage, stable turn-on with standard gate drive
- 150mΩ On-Resistance (@VGS=10V), significantly reduces conduction loss
- 20A Maximum Current, TO220F package can also handle high current
- Superjunction Multi-Epitaxial Process (SJ_Multi-EPI), optimizes balance between conduction and switching performance
Domain and module applications：
- Switching Power Supply/Charger – As a high-voltage main switching transistor, effectively reduces temperature rise, improving overall efficiency and reliability.
- PFC Power Factor Correction – Utilizes low on-resistance and high-speed switching characteristics to reduce rectification losses, improving power quality.
- Inverter/Motor Drive – 600V withstand voltage and 20A current carrying capacity, suitable for industrial frequency conversion and power tool drive stages.
- LED Lighting Driver Power Supply – Stably carries high-voltage bus current, extends driver life, reduces thermal stress.
- Electric Vehicle Charger – Withstands voltage fluctuations in on-board charging environments, providing solid support for high-voltage DC-DC conversion.
- Adapter/Server Power Supply – Delivers stable performance in synchronous rectification or active clamp topologies, aiding high power density design.
- Home Appliance Control Board – Provides reliable switching control for inductive loads like air conditioners and washing machines, strong anti-surge capability. One-sentence summary: TK20A60U(Q,M)-VB is not an ordinary MOS tube; it is the "mainstay" and "efficiency engine" of your high-voltage, high-current power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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