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TK12A60U(Q,M)-VB Product details
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Still troubled by high losses and insufficient reliability in high-voltage switching power supplies? VBsemi TK12A60U(Q,M)-VB is here to solve your problems! This TO220F packaged N-MOSFET adopts SJ_Multi-EPI superjunction technology, with a voltage rating up to 600V, capable of carrying 12A continuous current, and an on-resistance of only 330mΩ, excelling in both switching and conduction losses. Whether in industrial power supplies, charging piles, or inverter systems, it delivers robust avalanche energy tolerance and low junction temperature rise, making it a "hardcore performer" for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 12A | 330(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 600V (Sufficient safety margin for high voltage applications)
Drive Range: ±30V (Compatible with common gate drive circuits)
Threshold Voltage: 3.5V (Moderate threshold, strong noise immunity)
On-Resistance: 330mΩ @ 10V (Low conduction loss, controllable heat)
High Current Capability: 12A (TO220F package handles it easily)
Technology Platform: SJ_Multi-EPI (Superjunction multi-epitaxial process, better figure of merit)
Package: TO220F (Fully insulated package, no extra insulation pad needed, easy to mount and dissipate heat)
Drive Range: ±30V (Compatible with common gate drive circuits)
Threshold Voltage: 3.5V (Moderate threshold, strong noise immunity)
On-Resistance: 330mΩ @ 10V (Low conduction loss, controllable heat)
High Current Capability: 12A (TO220F package handles it easily)
Technology Platform: SJ_Multi-EPI (Superjunction multi-epitaxial process, better figure of merit)
Package: TO220F (Fully insulated package, no extra insulation pad needed, easy to mount and dissipate heat)
Domain and module applications：
— Six High-Voltage Scenarios, One Tube Handles It All
Switching Power Supplies: Adapters, Industrial Power Main Switch Tubes, Efficiency Improvement, Temperature Rise Reduction
Charging Pile Modules: High-Voltage DC-DC Conversion, Stable and Reliable, Strong Anti-Impact Capability
Inverters and UPS: Photovoltaic Inversion, Backup Power Supply, Low High-Frequency Switching Loss
Motor Drives: Industrial Variable Frequency Drives, White Goods Motors, Smooth Driving, High Durability
PFC Power Correction: Active Power Factor Correction Circuits, Aiding High Power Density Design
Battery Charging Control: Electric Vehicle Chargers, Energy Storage Systems, Safer Overload Protection TK12A60U(Q,M)-VB — High Voltage, High Current, Stable and Composed, Making Your Power Supply Design More Competitive!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
