中文
English
TK8A60W,S4VX-VB Product details
Back to previous pageProduct introduction：
Still troubled by losses and heat dissipation in high-voltage switching power supplies? Let VBsemi TK8A60W,S4VX-VB solve your worries! This TO220F packaged N-MOS transistor, using SJ_Multi-EPI super junction technology, combines 650V withstand voltage and 9A current capability with an on-resistance of only 550mΩ, achieving an excellent balance between switching losses and conduction losses. Whether in flyback power supplies, PFC circuits, or high-voltage drives, it serves as an 'efficiency champion' in high-voltage applications with stable and reliable performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 650V (Handles high-voltage systems with ease)
Drive Range: ±30V (Compatible with common PWM drive signals)
Turn-On Threshold: 3.5V (Easily turned on by standard gate drive)
On-Resistance: 550mΩ @ 10V (Low loss, high efficiency)
High Current Capability: 9A (TO220F package offers better heat dissipation)
Package: TO220F (Fully molded insulated package, easy for installation and thermal design)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, excellent switching characteristics)
Drive Range: ±30V (Compatible with common PWM drive signals)
Turn-On Threshold: 3.5V (Easily turned on by standard gate drive)
On-Resistance: 550mΩ @ 10V (Low loss, high efficiency)
High Current Capability: 9A (TO220F package offers better heat dissipation)
Package: TO220F (Fully molded insulated package, easy for installation and thermal design)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, excellent switching characteristics)
Domain and module applications：
– One Chip for High-Frequency High-Voltage Scenarios
Switching Power Supply: Main switch tube for flyback/forward topologies, improving overall efficiency and reliability.
PFC Power Factor Correction: Low loss under high voltage and high power, aiding energy saving and consumption reduction.
LED Driver Power Supply: Wide voltage input constant current control, stable and durable.
Adapters and Chargers: High-power fast charging solution, easier heat dissipation.
Inverters and UPS: High-voltage bus switching, strong impact resistance.
Industrial Control Auxiliary Power Supply: Wide temperature range, high reliability, meeting harsh environments.
Photovoltaic Micro-Inverter: Low high-frequency switching loss, improving power generation efficiency. TK8A60W,S4VX-VB – High-voltage platform, robust choice, making your power supply design more efficient and secure!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
