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TK6A60W,S4VX-VB Product details
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Struggling with conduction losses and heat dissipation space in high-voltage, high-power scenarios? Let VBsemi TK6A60W,S4VX-VB solve your worries! This TO220F packaged N-MOS transistor is designed for 650V high-voltage systems, featuring a 9A high current carrying capacity and a low on-resistance of 550mΩ (@10V), effectively reducing conduction losses. Utilizing SJ_Multi-EPI super junction technology, it offers excellent switching characteristics and strong avalanche resistance. Paired with the fully molded TO220F package, it eliminates the need for additional insulating pads, making high-voltage power supply designs safer and more compact.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 650V (Ample margin for high-voltage systems, stable and reliable)
Drive Range: ±30V (Compatible with various gate drive schemes)
Turn-On Threshold: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 550mΩ @ 10V (Low conduction loss, less heat generation)
Current Capability: 9A (Achieves high current output in TO220F package)
Package: TO220F (Fully molded, good heat dissipation, easy to install)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial technology, fast switching, low loss)
Drive Range: ±30V (Compatible with various gate drive schemes)
Turn-On Threshold: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 550mΩ @ 10V (Low conduction loss, less heat generation)
Current Capability: 9A (Achieves high current output in TO220F package)
Package: TO220F (Fully molded, good heat dissipation, easy to install)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial technology, fast switching, low loss)
Domain and module applications：
– One Chip for Six High-Voltage Scenarios
Switching Power Supply: Main switch tube for adapters and chargers, achieving both efficiency and reliability.
LED Lighting Driver: High-voltage constant current solution, stable output, no flicker.
Industrial Control Power Supply: Wide voltage input, strong anti-interference capability, adapts to harsh power grids.
Photovoltaic Inverter Auxiliary Power Supply: Draws power from high-voltage bus, low conversion loss.
Motor Drive Power Stage: Powered by high-voltage bus, smooth drive, comprehensive protection.
Electric Vehicle Charger: High-frequency LLC or flyback topology, facilitating miniaturization and high efficiency. TK6A60W,S4VX-VB – High voltage, high current, rock-solid, making your power supply design worry-free!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
