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TK35A65W,S5X-VB Product details
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Struggling with conduction losses and heat dissipation issues in high-voltage switching power supplies? Let VBsemi TK35A65W,S5X-VB solve your problems! This single N-MOSFET in TO220F package withstands 650V high voltage and supports a continuous current of up to 36A, with an ultra-low on-resistance of 75mΩ @ 10V, significantly reducing conduction losses. Utilizing SJ_Multi-EPI superjunction technology, it offers fast switching speed and low power consumption, making it especially suitable for high-frequency, high-efficiency high-voltage power supply designs. It is a 'high-voltage efficiency weapon' for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 650V (Ample margin for high-voltage applications, safe and reliable)
Drive Range: ±30V (Compatible with various drive signals, flexible design)
Turn-On Threshold: 3.5V (Can be effectively driven by standard logic levels)
Ultra-Low On-Resistance: 75mΩ @ 10V (Extremely low conduction losses, minimal heat generation)
High Current Capability: 36A (Strong single-device current handling, simplifies parallel design)
Package: TO220F (Fully encapsulated insulation, reliable heat dissipation, easy installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, excellent switching characteristics)
Drive Range: ±30V (Compatible with various drive signals, flexible design)
Turn-On Threshold: 3.5V (Can be effectively driven by standard logic levels)
Ultra-Low On-Resistance: 75mΩ @ 10V (Extremely low conduction losses, minimal heat generation)
High Current Capability: 36A (Strong single-device current handling, simplifies parallel design)
Package: TO220F (Fully encapsulated insulation, reliable heat dissipation, easy installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, excellent switching characteristics)
Domain and module applications：
– Six Typical Scenarios, One Solution
Switching Power Supply: Efficient AC-DC main switch tube, improving overall system efficiency
PFC Power Factor Correction: High-frequency Boost circuit, reducing loss and EMI
Inverter and UPS: High-voltage bus switching, stable and reliable
Charging Station and Vehicle Power Supply: High voltage withstand and high current, handling harsh conditions
Industrial Motor Drive: High-voltage drive circuit, robust and durable
Photovoltaic Inverter: MPPT boost and inversion, supporting green energy conversionTK35A65W,S5X-VB – High voltage, high current, stable as a rock, making your power supply design more efficient and effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
