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TK110A65Z,S4X-VB Product details
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TK110A65Z,S4X-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. Using SJ_Multi-EPI superjunction technology, it balances low conduction losses with high reliability. The TO220F fully molded package achieves a good balance between heat dissipation performance and electrical isolation. The combination of 650V withstand voltage, 26A current carrying capacity, and 115mΩ on-resistance makes it a preferred power device for switching power supplies, inverters, and industrial power applications, especially suitable for applications with strict requirements on voltage withstand and overcurrent capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 26A | 115(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 26A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 26A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
VDS=650V: Suitable for 380V AC systems and high-voltage DC buses, providing ample voltage spike margin and significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive margin, compatible with various PWM controllers and driver ICs, simplifying gate drive circuit design.
Vth=3.5V (typical): Moderate turn-on voltage, strong anti-interference capability, ensuring stable switching behavior under high voltage.
RDS(on)=115mΩ @ VGS=10V: Super junction technology achieves low on-resistance, significantly reducing full-load conduction losses and improving system efficiency.
ID=26A: Ample continuous current margin to handle transient peak current surges such as motor startup and capacitor charging.
Package TO220F: Fully molded plastic structure eliminates the need for additional insulation pads, low thermal resistance, easy installation, suitable for industrial-grade power conversion modules.
Domain and module applications：
Switching Power Supply: High-voltage superjunction structure reduces switching and conduction losses, suitable for LLC, flyback, and other topologies, improving power conversion efficiency.
Inverter and UPS: 650V voltage withstand combined with low on-resistance ensures reliable operation under bus voltage fluctuations, suitable for photovoltaic inverters and uninterruptible power supplies.
Motor Drive: High voltage withstand margin handles turn-off spikes from inductive loads, low RDS(on) reduces driver temperature rise, suitable for industrial motor control.
PFC Power Factor Correction: Excellent high-frequency switching characteristics reduce boost stage losses, improving power factor and harmonic performance.
Electric Vehicle Charging Module: High-voltage, high-current capability matches the DC-DC stage of charging stations, improving overall power density and reliability.
Industrial Auxiliary Power Supply: Wide safe operating area adapts to harsh grid conditions, TO220F package facilitates heat dissipation design, extending equipment life. Selection Summary: TK110A65Z,S4X-VB achieves an excellent balance between high-voltage withstand, current-carrying capacity, and conduction loss, making it a cost-effective general-purpose choice for 650V high-voltage switching applications, especially suitable for industrial and energy projects with strict requirements on system efficiency, thermal management, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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