中文
English
MCPF180N65SH-BP-VB Product details
Back to previous pageProduct introduction：
MCPF180N65SH-BP-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. Using SJ_Multi-EPI (superjunction multi-epitaxial) technology, it achieves an excellent balance between on-resistance and switching speed. The TO220F package provides good heat dissipation capability and insulation characteristics, simplifying thermal design and enhancing system reliability. The combination of 650V withstand voltage, 20A current carrying capacity, and 160mΩ on-resistance makes it a cost-effective choice for switching power supplies, industrial control, and high-power conversion modules.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
VDS=650V: Covers high-voltage buses and wide-input voltage systems, providing ample spike margin, reducing avalanche and breakdown risks.
VGS=±30V: Wide gate drive range, compatible with common PWM controllers and driver ICs, enhancing drive design flexibility.
Vth=3.5V (typical): Moderate threshold voltage, effectively suppresses false turn-on, while ensuring anti-interference capability in high-voltage scenarios.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance, significantly reduces full-load conduction losses, improving overall system efficiency and temperature performance.
ID=20A: Strong continuous current capability, meeting the current requirements of medium-to-high power switching circuits, motor drives, and auxiliary power supplies.
Package TO220F: Fully molded plastic insulation design, eliminates the need for additional insulation pads, easy installation, with excellent heat dissipation performance.
Technology SJ_Multi-EPI: Super junction structure optimizes the trade-off between on-resistance and voltage rating, reducing switching losses, suitable for high-frequency hard-switching topologies.
Domain and module applications：
Switching Power Supply: Low on-resistance and high voltage stress margin improve power conversion efficiency, reduce power stage temperature rise, suitable for flyback, forward, and other topologies.
PFC Power Factor Correction: Superjunction technology brings low Qg and fast switching characteristics, effectively reducing switching losses, improving PF value and overall efficiency.
High-Voltage DC-DC Converter: 650V voltage withstand covers wide input voltage scenarios, high reliability in synchronous rectification or H-bridge applications, beneficial for module power density improvement.
Inverter and Motor Drive: 20A continuous current drives small-to-medium power motors, low conduction loss reduces heatsink size, improving long-term driver stability.
Industrial Auxiliary Power Supply: Wide safe operating area and pulse current capability handle startup surges and load transients, ensuring system robustness.
High-Power LED Driver: Direct power supply from high-voltage bus, low conduction voltage drop reduces loss, supporting high-string-count LED constant current schemes, improving overall lamp efficiency.
Photovoltaic and Energy Storage Systems: Suitable for boost and MPPT circuits, high voltage withstand margin handles solar panel open-circuit voltage fluctuations, extending system life. Selection Summary: MCPF180N65SH-BP-VB achieves an excellent balance between high-voltage capability, conduction loss, and packaging ease of use, making it a cost-effective general-purpose choice among 650V class power MOSFETs, especially suitable for industrial power supplies and high-power conversion projects with strict requirements on efficiency, heat dissipation, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
