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FCPF165N65S3R0L-VB Product details
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Troubled by high power consumption and challenging thermal design in high-voltage systems? Let VBsemi FCPF165N65S3R0L-VB solve your problems! This N-MOSFET in TO220F package, built with SJ_Multi-EPI (superjunction multi-epitaxial) technology, withstands up to 650V while delivering a high current of 20A, with an on-resistance of only 160mΩ, optimizing both switching and conduction losses, making high-voltage power supply design no longer 'hot'. For demanding industrial and power applications, it is an engineer's trusted 'high-voltage efficiency cornerstone'.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 650V (Ample margin for high-voltage systems, reliable and durable)
Drive Range: ±30V (Compatible with common high-voltage gate drives, flexible adaptation)
Turn-On Threshold: 3.5V (Clear threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low conduction losses, more controllable temperature rise)
High Current Capability: 20A (Demonstrates strong current carrying capacity in TO220F package)
Package: TO220F (Fully encapsulated insulation, excellent heat dissipation performance, easy installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, optimized conduction and switching characteristics)
Drive Range: ±30V (Compatible with common high-voltage gate drives, flexible adaptation)
Turn-On Threshold: 3.5V (Clear threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low conduction losses, more controllable temperature rise)
High Current Capability: 20A (Demonstrates strong current carrying capacity in TO220F package)
Package: TO220F (Fully encapsulated insulation, excellent heat dissipation performance, easy installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, optimized conduction and switching characteristics)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supply: Efficient AC-DC main switch, helping power modules improve energy efficiency
Charging Station Module: High-voltage, high-power conversion, stable output, reducing system losses
Photovoltaic Inverter: MPPT and DC-AC conversion, improving conversion efficiency of power generation systems
Industrial Drive: Motor controllers, variable frequency drives, high voltage withstand, shock resistance, more reliable operation
UPS Uninterruptible Power Supply: High-voltage bus switching and inversion, protecting critical loads from power interruption
Electric Vehicle Auxiliary Power Supply: Onboard DC-DC conversion, wide safety margin, adapting to harsh environmentsFCPF165N65S3R0L-VB – No worries about high voltage, no heat with high current, making your power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
