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TK165A65Z5,S4X-VB Product details
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Still troubled by high power consumption and difficult temperature control in high-voltage systems? VBsemi TK165A65Z5,S4X-VB is here to help! This TO220F packaged N-MOS tube is designed for 650V high-voltage applications, capable of carrying 18A continuous current with an on-resistance as low as 230mΩ, offering excellent loss performance. The super junction multi-epitaxial (SJ_Multi-EPI) technology brings faster switching speeds and lower switching losses, allowing power supply designs to balance efficiency and reliability, making it a "hardcore workhorse" for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 18A | 230(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 650V (Sufficient margin for high-voltage systems)
Drive Range: ±30V (Compatible with various gate drive schemes)
Turn-On Threshold: 3.5V (Stable threshold, strong anti-interference)
On-Resistance: 230mΩ @ 10V (Low conduction loss, less heat generation)
High Current Capability: 18A (Stable output, strong driving capability)
Package: TO220F (Fully insulated package, convenient heat dissipation, reliable installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, excellent switching characteristics)
Drive Range: ±30V (Compatible with various gate drive schemes)
Turn-On Threshold: 3.5V (Stable threshold, strong anti-interference)
On-Resistance: 230mΩ @ 10V (Low conduction loss, less heat generation)
High Current Capability: 18A (Stable output, strong driving capability)
Package: TO220F (Fully insulated package, convenient heat dissipation, reliable installation)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, excellent switching characteristics)
Domain and module applications：
– One Tube Handles Six High-Voltage Scenarios
Switching Power Supply: Efficient AC-DC main switch, improving overall system efficiency
PFC Power Factor Correction: Low loss, high reliability, meeting stringent energy efficiency standards
Inverters and Variable Frequency Drives: Stably drives motor loads, strong impact resistance
Industrial Power Supply: Wide voltage input, handles complex grid environments
Photovoltaic Inverters: MPPT and DC-AC conversion, aiding efficient new energy power generation
Charging Piles and High-Voltage DC-DC: High-power conversion, worry-free heat dissipation TK165A65Z5,S4X-VB – High voltage, low resistance, rock-solid stability, making your power design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
