中文
English
FCPF11N65-VB Product details
Back to previous pageProduct introduction：
VBsemi FCPF11N65-VB is a Single N-channel field-effect transistor manufactured using SJ_Multi-EPI (super-junction multi-layer epitaxial) technology, designed for high-voltage power conversion and industrial-grade power control scenarios. Its TO220F fully plastic package provides good insulation and heat dissipation capabilities, suitable for thermal management and system safety isolation in high-voltage, medium-current applications. The device offers stable switching characteristics within a 650V drain-source voltage range, and the gate drive is compatible with common 10V logic levels, facilitating direct use with standard gate driver circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 11A | 420(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): Typical 3.5V
- On-Resistance (VGS=10V): 420mΩ (Typical)
- Maximum Drain Current (ID): 11A
- Package Type: TO220F
- Process Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): Typical 3.5V
- On-Resistance (VGS=10V): 420mΩ (Typical)
- Maximum Drain Current (ID): 11A
- Package Type: TO220F
- Process Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
1. Switching Power Supply (SMPS): Used as the main switch tube in high-voltage DC-DC converters, flyback, and LLC resonant power supplies, utilizing super-junction technology to reduce conduction and switching losses, improving overall efficiency.
2. Adapters and Chargers: Suitable for medium and high-power charging scenarios such as laptop power adapters and USB PD fast charging, meeting high-voltage stress requirements and enhancing reliability.
3. LED Lighting Driver: Used in high-voltage constant current drive circuits as a power switch to achieve stable output, supporting wide voltage input, improving dimming compatibility and current accuracy.
4. Industrial Control Power Supply: Applied in servo drives, inverter auxiliary power supplies, and industrial instrumentation power modules, with good voltage withstand margin and thermal stability.
5. Photovoltaic Inverter Auxiliary Circuit: Used in distributed photovoltaic systems for auxiliary power supply or DC-DC boost stage, adapting to high input voltage and wide temperature range working environments.
6. Electric Vehicle Charger: As a high-side switching device, applied in charger solutions for two-wheeled electric vehicles, power tools, etc., ensuring safe and efficient charging.
7. Power Factor Correction (PFC): As the main switch in Boost PFC circuits, combined with super-junction structure to achieve low on-resistance and fast recovery characteristics, meeting high power density design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
