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2SJ653-CB11-ON-VB Product details
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2SJ653-CB11-ON-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios, using Trench process to balance low switching loss with high reliability. The TO220F package provides good heat dissipation capability and insulation performance, suitable for industrial-grade power conversion and motor drive applications. The combination of 60V withstand voltage, 70A current carrying capacity, and 10mΩ on-resistance makes it an ideal choice for efficient power path designs, especially suitable for systems requiring high current, low loss, and strong heat dissipation capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 12(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
VDS=60V: Suitable for 12V/24V/36V/48V systems, providing ample voltage spike margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with 4.5V~12V drive levels, can directly connect to MCU/drivers, simplifying gate drive circuit.
Vth=2.5V (typical): Moderate threshold voltage, strong noise immunity, while supporting reliable drive at 4.5V logic level.
RDS(on)=12mΩ @ VGS=4.5V: Maintains low on-resistance even at low gate drive voltage, suitable for applications with limited gate voltage.
RDS(on)=10mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load temperature rise, allowing smaller heatsinks.
ID=70A: Ample continuous current margin to handle peak high currents like motor startup and power supply short circuits.
Package TO220F: Fully molded isolation design, no additional insulating pad required, low thermal resistance, easy to mount heatsink, suitable for high-power density layouts.
Domain and module applications：
High-power DC-DC Converters: Replaces Schottky diodes in synchronous rectification, significantly improving heavy-load efficiency and reducing power stage temperature rise.
Motor Drives and Control: Low conduction loss and ample current margin support high-power BLDC/PMSM drives; excellent PWM switching characteristics.
Lithium Battery Protection Board/Energy Storage System: Milliohm-level internal resistance reduces self-heating of the protection circuit; high voltage withstand capability handles battery pack voltage fluctuations.
UPS and Inverters: TO220F package facilitates compact power unit design; 60V voltage withstand adapts to multi-level topologies.
Industrial Switching Power Supplies: This device can be used in the low-voltage, high-current output stage to improve efficiency and reduce heat sink costs.
On-board Auxiliary Power Supplies: Wide safe operating area and strong avalanche capability adapt to 12V/24V vehicle electrical systems, offering high reliability.
Charging Piles/Adapters: Low on-resistance improves full-load efficiency; 70A current capability meets high-power output requirements. Selection Summary: The 2SJ653-CB11-ON-VB achieves an excellent balance between voltage withstand, current capability, and on-resistance. The TO220F package balances heat dissipation and installation convenience, making it a cost-effective universal choice for 60V low-voltage, high-current switching applications, especially suitable for power systems with strict requirements on heat dissipation, efficiency, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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