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TK30A06N1,S4X-VB Product details

Product introduction:

TK30A06N1,S4X-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. Trench technology balances ultra-low on-resistance with high switching speed, and the TO220F fully molded package achieves an ideal balance between heat dissipation and electrical isolation. The combination of 60V withstand voltage, 70A current carrying capacity, and 10mΩ on-resistance makes it a reliable upgrade option to replace traditional TO-220 or DPAK packaged devices, especially suitable for medium-to-high power, high-reliability industrial and automotive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 2.5V 70A 12(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 2.5V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 2.5V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N

VDS=60V: Suitable for 12V/24V/36V/48V systems, providing ample voltage spike margin, significantly reducing avalanche breakdown risk, and enhancing system robustness.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to MCU/drivers, while allowing a wider gate drive range for flexible design.
Vth=2.5V (Typical): Reliable turn-on at moderate gate drive voltage, balancing noise immunity and drive compatibility, suitable for various control schemes.
RDS(on)=10mΩ @ VGS=10V (12mΩ @ VGS=4.5V): Ultra-low on-resistance, extremely low conduction losses under full load conditions, effectively reducing heatsink size and improving power density.
ID=70A: Ample continuous current margin to handle transient high current surges such as motor startup and battery short-circuit protection.
Package TO220F: Fully molded structure eliminates the need for additional insulation pads, easy to install, low thermal resistance, suitable for direct mounting on metal chassis or heatsinks, simplifying thermal design.

Domain and module applications:


Low-Voltage High-Power DC-DC Converters: Application in the synchronous rectification stage can significantly improve heavy-load efficiency. 60V voltage tolerance combined with low on-resistance aids module miniaturization and high power density design.
Motor Drive and Control: Low PWM switching losses, 70A high current capability meets the drive needs of power tools, e-bikes, robots, etc., with a noticeable decrease in controller temperature rise.
Battery Protection and Power Management: Milliohm-level internal resistance minimizes self-heating of the protection board. Fast switching characteristics ensure reliable shutdown during overcurrent/short circuit, extending battery pack lifespan.
Automotive Auxiliary Power and Body Control: 60V voltage tolerance is suitable for 12V/24V automotive electrical systems. Wide safe operating area and robust packaging process meet automotive-grade reliability requirements.
UPS and Communication Power Supplies: Replaces multi-tube parallel solutions on the low-voltage high-current main power path, simplifying circuit layout, reducing BOM cost and system failure rate.
Industrial Control and Servo Drives: The TO220F package is easy to mount on a heatsink. The Trench process brings low gate charge, suitable for high-frequency hard-switching topologies, improving overall machine efficiency. Selection Summary: The TK30A06N1,S4X-VB achieves an excellent balance between voltage margin, current carrying capacity, on-resistance, and package ease of use. It is a cost-effective general-purpose choice for 60V low-voltage high-current switching applications, especially suitable for industrial and automotive projects with strict requirements on temperature rise, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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