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TK9A45D(STA4,Q,M)-VB Product details

Product introduction:

TK9A45D(STA4,Q,M)-VB is a high-voltage, high-current N-channel MOSFET, packaged in TO220F, with 650V drain-source voltage and 10A current capability. Utilizing the Planar process, the typical on-resistance is 830mΩ, offering stable switching characteristics suitable for high-voltage power conversion scenarios. The gate drive range is wide, up to ±30V, compatible with various drive circuits, ensuring high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 10A 830(mΩ) Planar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 10A Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 10A Planar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Voltage: 650V
Drive Voltage: ±30V
Threshold Voltage: 3.5V
On-Resistance (10V Drive): 830 mΩ
Maximum Current: 10A
Package: TO220F
Technology: Planar

Domain and module applications:


Switching Power Supplies → High-voltage main switch, stable and reliable
AC-DC Adapters → Efficient conversion, reduced losses
LED Lighting Drivers → Constant current control, durable and long-lasting
Industrial Control Power Supplies → Surge resistant, adapts to harsh environments
Photovoltaic Inverters → High-voltage bus conversion, solid performance
Motor Drive Circuits → High-voltage drive, excellent heat dissipation
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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