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FQPF19N20T-VB Product details

Product introduction:

FQPF19N20T-VB is a high-performance N-channel power MOSFET in a TO220F package, with 200V withstand voltage and 20A current capacity. With Trench technology, its on-resistance is as low as 58mΩ, resulting in low switching loss and low heat generation, making it suitable for medium-to-high voltage power conversion scenarios. The gate drive is flexible, with a wide ±20V range, compatible with common drive circuits, ensuring high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 200V 3V 20A 58(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 200V 3V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 200V 3V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Drain-Source Voltage: 200V
Gate-Source Voltage: ±20V
Threshold Voltage: 3V
On-Resistance (at 10V drive): 58mΩ
Maximum Current: 20A
Package: TO220F
Technology: Trench

Domain and module applications:


Switching Power Supply → Efficient conversion, stable output
DC-DC Converter → Buck/boost capable, lower losses
Motor Drive → High current drive, fast response
Power Tools → High power output, durable and reliable
Battery Charger → Clean switching, proper protection
LED Lighting Power Supply → Constant current, stable brightness, low temperature rise
Industrial Control Auxiliary Power Supply → High voltage resistance, strong surge immunity
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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