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RJK2017DPP-B1#T2F-VB Product details

Product introduction:

RJK2017DPP-B1#T2F-VB is a Single N-MOSFET designed for high-voltage power switching applications, using Trench technology to achieve a good balance between switching loss and conduction loss. The TO220F fully insulated package offers excellent insulation and heat dissipation, eliminating the need for additional insulation pads, facilitating installation, and reducing system cost. The combination of 200V withstand voltage, 40A current capacity, and 48mΩ on-resistance makes it a cost-effective and reliable option for industrial power supplies, motor drives, and high-voltage DC-DC converters.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 200V 3V 40A 104(mΩ) 48(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 200V 3V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 200V 3V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N

VDS=200V: Suitable for 48V/72V/110V and other high-voltage systems, providing ample voltage spike margin, significantly improving system avalanche breakdown resistance.
VGS=±20V: Compatible with standard 10V~15V gate drives, can be directly driven by dedicated driver ICs or optocouplers without complex level shifting.
Vth=3V (typical): Moderate threshold voltage, effectively suppresses dv/dt-induced false turn-on, enhancing bridge circuit reliability.
RDS(on)=48mΩ @ VGS=10V: Low on-resistance, low conduction losses at full load, combined with TO220F package to reduce heatsink design requirements.
RDS(on)=104mΩ @ VGS=4.5V: Controllable conduction under low-voltage drive conditions, providing margin for gate drive derating.
ID=40A: Ample continuous current capability, can handle high-current transient conditions such as motor startup and capacitive load surges.
Package TO220F: Fully molded isolation structure, heatsink can directly contact system metal housing, simplifying safety design and improving assembly efficiency.

Domain and module applications:


High-Voltage DC-DC Converters: Low on-resistance and fast switching characteristics help improve conversion efficiency, suitable for high-voltage bus applications like communication and server power supplies.
Motor Drives and Inverters: 200V voltage rating covers mainstream industrial motor voltage levels; low PWM switching losses significantly reduce driver temperature rise.
UPS Uninterruptible Power Supplies: Performs excellently in inverter stages and bypass switches; high surge capability ensures reliability during load switching.
Photovoltaic Inverter Auxiliary Power Supply: Wide voltage margin accommodates high output voltage fluctuations from solar panels, enhancing system immunity to transient overvoltage.
Electric Vehicle Chargers: High peak current capability suits LLC or phase-shifted full-bridge topologies, aiding charger module miniaturization and efficiency.
Power Factor Correction (PFC) Circuits: Trench process provides low gate charge, reducing switching losses and meeting high power density design requirements.
Industrial Control Modules: TO220F package facilitates layout and heat dissipation, suitable for PLCs, servo drives, and various industrial power modules. Summary: The RJK2017DPP-B1#T2F-VB achieves a balance between high voltage withstand, low on-resistance, high current capability, and packaging ease, making it a cost-effective general-purpose choice for 200V high-voltage switching applications, particularly suitable for medium-to-high power projects with strict requirements on system reliability, thermal design, and cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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