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TK65A10N1,S4X-VB Product details

Product introduction:

TK65A10N1,S4X-VB is a high-current, low-loss N-channel MOS transistor in a TO220F package, with a 100V withstand voltage and 120A current carrying capacity. With Trench technology, it achieves an on-resistance as low as 3.7mΩ, resulting in low heat generation and high efficiency. The gate drive is flexible, with a ±20V wide range, suitable for various medium-to-low voltage drive control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 100V 3V 120A 3.7(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Voltage Rating: 100V
Drive Voltage: ±20V
Turn-on Threshold: 3V
On-Resistance (10V Drive): 3.7 mΩ
Maximum Current: 120A
Package: TO220F

Domain and module applications:


High-power DC-DC conversion → Synchronous rectification, higher efficiency
Motor drive and control → High current drive, fast response
Power adapters, fast charging → Low voltage drop, high reliability
Battery charge/discharge protection → Precise cutoff, extended lifespan
UPS uninterruptible power supplies → Shock resistance, stable output
Automotive power systems → Good temperature tolerance, suitable for harsh environments
Industrial control modules → High reliability, long-term stable operation
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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