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MCB2D4P04YL-TP-VB Product details

Product introduction:

MCB2D4P04YL-TP-VB is a high-current, low-impedance P-channel MOSFET in TO263 package, with -40V withstand voltage and -150A current carrying capacity. Trench technology ensures an ultra-low on-resistance of 3mΩ (10V drive), minimizing conduction losses for high-power applications. Gate drive is flexible with a wide ±20V range, facilitating system design.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -40V -3V -150A 3(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -40V -3V -150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -40V -3V -150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
Voltage Rating: -40V
Drive Voltage: ±20V
Threshold Voltage: -3V
On-Resistance (10V Drive): 3 mΩ
Maximum Current: -150A
Package: TO263

Domain and module applications:


High-power DC-DC Conversion → Synchronous rectification, excellent efficiency
Motor Drives and Inverters → High current output, low temperature rise
Battery Protection Circuits → Low-loss shutdown, safe and reliable
Automotive Power Systems → Shock-resistant, adapts to harsh environments
Communication Base Station Power Supplies → High reliability, continuous and stable power supply
Industrial Control and Power Tools → High power margin, strong durability
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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