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2SJ664-E-VB Product details
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2SJ664-E-VB is a Single P-MOS optimized for high-voltage power switching applications. Trench technology balances low switching losses with high reliability, while the TO263 package achieves a balance between heat dissipation and ease of installation. The combination of -100V withstand voltage, -37A current capability, and 40mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or TO220 packaged devices, especially suitable for high-power-density and demanding thermal environment applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 50(mΩ) | 40(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
VDS=-100V: Suitable for 24V/48V/60V systems, providing ample voltage spike margin and reducing avalanche breakdown risk.
VGS=±20V: Compatible with 10V~15V drive levels, can be directly driven by gate driver ICs or PWM controllers, simplifying peripheral circuitry.
Vth=-2V (Typical): Negative threshold voltage design ensures effective conduction even with -4.5V drive, compatible with standard P-MOS drive logic.
RDS(on)=40mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, allowing for smaller heatsinks or extended lifespan.
ID=-37A: Ample continuous current margin to handle peak demands of most motor loads and power switches.
Package TO263: Low thermal resistance, short drain heat path, suitable for high-current continuous operation, and supports automated SMT assembly for improved production efficiency.
Domain and module applications：
Motor Drive and Inverter: Low on-resistance reduces power loss, -100V withstand voltage adapts to industrial and automotive bus voltages, PWM control is more reliable.
Battery Protection and Power Management: Negative gate threshold logic facilitates high-side switch applications, fast response ensures reliable cutoff during overcurrent/short circuit, low internal resistance reduces protection board self-heating.
DC-DC Converter and Synchronous Rectification: Replaces high-side P-MOS solutions, simplifies drive circuits, significantly improves heavy-load efficiency, beneficial for module miniaturization.
Automotive Auxiliary Power Supply: Voltage margin and wide operating temperature range adapt to 12V/24V automotive buses, strong vibration resistance, high reliability.
Power Load Switch: Low on-voltage drop reduces system loss, TO263 package suitable for high current on/off control, widely used in industrial control and communication equipment.
UPS and Energy Storage System: Negative gate P-MOS high-side switch design reduces common-mode interference risk, improves system safety, while meeting high current charge/discharge requirements. Selection Summary: 2SJ664-E-VB achieves an excellent balance between high withstand voltage, high current capability, and low on-resistance, making it a cost-effective general-purpose choice for -100V power switch applications, especially suitable for industrial and automotive projects with strict thermal and reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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