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SIHB24N80AE-T5-GE3-VB Product details
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Still troubled by insufficient voltage tolerance and high conduction losses in high-voltage, high-power applications? VBsemi SIHB24N80AE-T5-GE3-VB is here to help! This TO263-packaged N-MOS uses SJ_Multi-EPI super junction multi-layer epitaxial technology, withstanding 800V high voltage, carrying 20A continuous current, and featuring an on-resistance of only 160mΩ (@10V), excelling in high-voltage switching power supplies and inverters. Super Junction technology provides lower gate charge and faster switching speed, effectively reducing switching losses—a 'high-voltage weapon' for high-reliability, high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 800V (Ultra-high voltage, easily handles high-voltage bus)
Drive Range: ±30V (Ample drive margin, compatible with various gate drive circuits)
Threshold Voltage: 3.5V (Standard level drive, stable and reliable threshold)
Ultra-Low On-Resistance: 160mΩ @ 10V (Extremely low conduction loss among high-voltage devices)
High Current Capability: 20A (Achieves high current carrying capacity in TO263 package)
Package: TO263 (D2PAK, suitable for power circuit heat dissipation and SMT)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, fast switching, low loss)
Drive Range: ±30V (Ample drive margin, compatible with various gate drive circuits)
Threshold Voltage: 3.5V (Standard level drive, stable and reliable threshold)
Ultra-Low On-Resistance: 160mΩ @ 10V (Extremely low conduction loss among high-voltage devices)
High Current Capability: 20A (Achieves high current carrying capacity in TO263 package)
Package: TO263 (D2PAK, suitable for power circuit heat dissipation and SMT)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, fast switching, low loss)
Domain and module applications：
– Seven Hot Scenarios, One Solution
Switching Power Supply: High-voltage DC-DC, AC-DC main switch tube, combining efficiency and reliability
Photovoltaic Inverter: MPPT boost and inverter bridge, high withstand voltage, low temperature rise
UPS Uninterruptible Power Supply: Mains and battery switching, stable output, strong impact resistance
Charging Pile Module: High-voltage high-power conversion, low conduction loss, reduced heat dissipation pressure
Industrial Motor Drive: Frequency converter, servo drive, high-voltage bus switch, smooth operation
LED High-Power Lighting: Constant current high-voltage drive, stable brightness, longer lifespan
Electric Vehicle Onboard Charger: 800V high-voltage platform, enabling efficient energy conversion and vehicle electronics
SIHB24N80AE-T5-GE3-VB – High-voltage platform, high current, low loss, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
