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SIHB17N80AE-T1-GE3-VB Product details
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SIHB17N80AE-T1-GE3-VB is a high-voltage, high-current N-channel power MOSFET in TO263 package, with 800V withstand voltage and 15A current carrying capacity. Based on SJ_Multi-EPI Super Junction technology, the on-resistance is as low as 380mΩ, effectively reducing conduction loss and improving system efficiency in high-power high-voltage scenarios. The gate drive range is wide up to ±30V, offering stronger compatibility and adapting to various industrial-grade drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 800V
Drive Voltage: ±30V
Turn-On Threshold: 3.5V
On-Resistance (10V Drive): 380 mΩ
Maximum Current: 15A
Package: TO263
Technology: SJ_Multi-EPI
Drive Voltage: ±30V
Turn-On Threshold: 3.5V
On-Resistance (10V Drive): 380 mΩ
Maximum Current: 15A
Package: TO263
Technology: SJ_Multi-EPI
Domain and module applications：
Switching power supplies → High-voltage conversion efficiency, lower thermal loss
Inverters and UPS → Stable high-voltage bus, reliable and durable
Industrial power equipment → Impact resistance, adapting to harsh environments
Photovoltaic inverters → Efficient boost, increasing system power generation
Electric vehicle charging stations → High current carrying, stable output
PFC power factor correction → Low on-resistance, reducing energy consumption
High-voltage DC-DC modules → High-frequency switching, superior performance
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
