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SIHB15N80AE-T5-GE3-VB Product details
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VBsemi SIHB15N80AE-T5-GE3-VB is a Single N-channel field-effect transistor, part of the VBsemi brand product series. This product features high withstand voltage, low conduction loss, and excellent switching performance, suitable for various high-voltage power conversion and control applications. Manufactured using SJ_Multi-EPI Super Junction technology, it has a drain-source voltage (VDS) of 800V and operates at a gate-source voltage (VGS) of ±30V. The product is packaged in TO263, suitable for medium and high-power, high-reliability power supply designs and industrial application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | 370(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 370 mΩ
Maximum Drain Current (ID): 13A
Technology Type: SJ_Multi-EPI (Super Junction Multi-Epitaxial Process)
Package: TO263
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 370 mΩ
Maximum Drain Current (ID): 13A
Technology Type: SJ_Multi-EPI (Super Junction Multi-Epitaxial Process)
Package: TO263
Domain and module applications：
1. Switching power supplies (SMPS): SIHB15N80AE-T5-GE3-VB is suitable for primary side switching circuits in high-voltage switching power supplies, such as adapters, chargers, and industrial power modules, reducing switching losses and improving system efficiency.
2. Power factor correction (PFC) circuits: In PFC boost topologies, this device can handle high-voltage, high-current switching tasks, helping to improve power factor and reduce harmonic distortion.
3. LED lighting driver power supplies: Suitable for the main switch tube in high-voltage LED driver circuits, capable of stable operation in a wide input voltage environment, meeting the needs of high-efficiency, energy-saving lighting applications.
4. Industrial frequency converters and motor drives: In motor control systems such as inverter air conditioners, industrial fans, and water pumps, this MOSFET can be used as a switching device for inverter bridge arms, providing reliable voltage margin and overcurrent capability.
5. High-voltage DC-DC converters: Used in high-voltage DC-DC converters for communication power supplies, server power supplies, etc., achieving efficient voltage conversion and energy transfer.
6. Uninterruptible power supply (UPS) systems: In the rectifier/inverter circuits of UPS, this product can serve as a switching unit, ensuring stable operation under high voltage stress.
7. Photovoltaic inverter auxiliary power supplies: Suitable for high-side auxiliary circuits in photovoltaic systems or small string inverters, meeting requirements for high withstand voltage and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
