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SIHB15N80AE-T1-GE3-VB Product details
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Struggling with high switching losses and difficult heat dissipation in high-voltage power supply designs? VBsemi SIHB15N80AE-T1-GE3-VB offers an efficient and reliable solution! This N-MOSFET in TO263 package, using advanced Super Junction Multi-Epitaxial (SJ_Multi-EPI) technology, withstands up to 800V and has an on-resistance of only 370mΩ. Whether for high-voltage DC-DC converters, server power supplies, or photovoltaic inverters, it handles them with ease. The 13A high current capability combined with low conduction loss makes your power system more efficient and stable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | 370(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 800V (High voltage application, ample margin)
Drive Range: ±30V (Compatible with various gate drive schemes)
Turn-On Threshold: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 370mΩ @ 10V (Lower loss in high voltage devices)
High Current Capability: 13A (Continuous drain current, robust and reliable)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, excellent switching performance)
Package: TO263 (D2PAK, suitable for high power surface mount, good thermal performance)
Drive Range: ±30V (Compatible with various gate drive schemes)
Turn-On Threshold: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 370mΩ @ 10V (Lower loss in high voltage devices)
High Current Capability: 13A (Continuous drain current, robust and reliable)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, excellent switching performance)
Package: TO263 (D2PAK, suitable for high power surface mount, good thermal performance)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching power supplies: Efficient AC-DC main switch tube, improving conversion efficiency and reducing temperature rise
Server power supplies: High-side power conversion, stable output, meeting stringent load requirements
Photovoltaic inverters: MPPT and DC-AC cascading, low loss supporting green energy
Electric vehicle charging stations: High-voltage DC conversion, high reliability, strong impact resistance
Industrial control: Motor drive auxiliary power supply, wide temperature range operation, adapting to harsh environments
LED lighting drivers: High-voltage constant current solution, high efficiency and energy saving, extending service life. SIHB15N80AE-T1-GE3-VB – High voltage, low loss, stable and reliable, making medium to high-power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
