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SIHB11N80AE-T5-GE3-VB Product details
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VBsemi SIHB11N80AE-T5-GE3-VB is a Single N-channel field-effect transistor, part of the VBsemi brand product series. This product features high withstand voltage, low conduction loss, and excellent switching characteristics, suitable for various medium and high-voltage power conversion and control applications. Manufactured using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, it has a drain-source voltage (VDS) of 800V, supports a gate-source voltage (VGS) of ±30V, and is packaged in TO263, suitable for power system designs requiring high reliability and good heat dissipation performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 9A | 600(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 600mΩ
Maximum Drain Current (ID): 9A
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Package: TO263
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 600mΩ
Maximum Drain Current (ID): 9A
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Package: TO263
Domain and module applications：
1. Switching power supplies (SMPS): SIHB11N80AE-T5-GE3-VB is suitable for high-voltage switching power supply circuits, such as AC-DC converters, server power supplies, and industrial power modules, improving conversion efficiency and reducing switching losses.
2. Photovoltaic inverters: In photovoltaic power generation systems, this device can be used for DC-AC conversion and Boost circuits in inverters, meeting the requirements for MOSFET reliability and low loss in high-voltage, high-power applications.
3. Motor drive control: Suitable for high-voltage motor drive modules, such as industrial frequency converters, water pump controllers, and compressor drive circuits, enabling efficient power conversion and stable motor control.
4. UPS uninterruptible power supplies: In UPS systems, this model can be used in critical paths such as rectification, inversion, and bypass switches, ensuring fast response for power switching and long-term stable system operation.
5. Electric vehicle charging stations: Suitable for power conversion modules in electric vehicle charging stations, serving as a switching device capable of withstanding high bus voltage and providing sufficient current margin, improving the reliability and energy efficiency of charging equipment.
6. High-voltage battery management and protection: In energy storage systems and high-voltage battery packs, it can be used as a charge/discharge control switch, enabling safe switching and overcurrent protection functions.
7. Industrial control and auxiliary power supplies: This product can also be used in industrial controllers, PLC power supplies, and high-voltage auxiliary power supply circuits, meeting high-performance requirements in complex application environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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