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SIHB11N80AE-T1-GE3-VB Product details
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VBsemi SIHB11N80AE-T1-GE3-VB is a Single N-channel field-effect transistor, part of the VBsemi brand high-performance high-voltage MOSFET series. This product is manufactured using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, featuring extremely low on-resistance and excellent switching characteristics, effectively reducing power loss and improving system efficiency. The device has a rated drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of ±30V, and a maximum drain current (ID) of 9A. It is packaged in TO263, offering good heat dissipation and a surface-mount structure suitable for automated production, applicable to medium and high-power power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 9A | 600(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 600mΩ
- Maximum Drain Current (ID): 9A
- Technology: SJ_Multi-EPI (Super Junction Multi-Layer Epitaxial)
- Package: TO263
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 600mΩ
- Maximum Drain Current (ID): 9A
- Technology: SJ_Multi-EPI (Super Junction Multi-Layer Epitaxial)
- Package: TO263
Domain and module applications：
1. Switching power supplies (SMPS): SIHB11N80AE is suitable for the main switch tube in efficient switching power supplies, such as adapters, chargers, and industrial power modules, enabling stable, low-loss power conversion under high input voltage conditions.
2. LED lighting drivers: This device can be used in high-voltage LED lighting driver circuits as a power switch for constant current or constant voltage control, meeting the efficiency and reliability requirements of medium to high-power lighting equipment.
3. Industrial equipment power supplies: In applications such as industrial control, communication base stations, and server power supplies, this MOSFET can be used in AC-DC or DC-DC conversion stages, providing a solution with high voltage withstand and low conduction loss.
4. Photovoltaic inverters and UPS: In photovoltaic grid-tied micro-inverters and uninterruptible power supply (UPS) systems, SIHB11N80AE can be used in boost or inverter topologies, leveraging its 800V withstand voltage and super-junction low Rdson characteristics to improve system power density and reliability.
5. Motor drive control: Suitable for auxiliary power supplies or brake switch circuits in high-voltage motor drives, enabling efficient and safe power control.
6. High-voltage BMS and charging station modules: In battery management systems (BMS) and electric vehicle charging station power modules, this product can serve as a high-side switch element for pre-charge, discharge control, and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
