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SIHB068N60EF-T1GE3-VB Product details
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Still plagued by high conduction loss and severe temperature rise in high-voltage high-current scenarios? Let VBsemi SIHB068N60EF-T1GE3-VB solve your worries! This TO263-packaged N-MOS transistor, using SJ_Multi-EPI super junction technology, combines 600V withstand voltage with an ultra-low 62mΩ on-resistance, with continuous drain current up to 41A, optimizing both switching and conduction losses. Whether in industrial power supplies, photovoltaic inverters, or electric vehicle charging modules, it handles them all with ease—a "hardcore主力" for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 600V (Ample margin for high-voltage systems, safe and reliable)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
Ultra-Low On-Resistance: 62mΩ @ 10V (Benchmark for low losses in high-voltage devices)
High Current Capability: 41A (Delivers significant power within TO263 package)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, excellent dynamic characteristics)
Package: TO263 (Suitable for high power density designs, superior thermal performance)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
Ultra-Low On-Resistance: 62mΩ @ 10V (Benchmark for low losses in high-voltage devices)
High Current Capability: 41A (Delivers significant power within TO263 package)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, excellent dynamic characteristics)
Package: TO263 (Suitable for high power density designs, superior thermal performance)
Domain and module applications：
– Six High-Voltage Scenarios, One Chip Handles All
Industrial Switching Power Supply: LLC half-bridge, full-bridge topology, high efficiency, low temperature rise
Photovoltaic Inverter: MPPT Boost circuit, capable of both hard switching and soft switching
Electric Vehicle Charging Module: High-voltage DC-DC conversion, stable and reliable
Motor Drive: High-voltage servo, industrial variable frequency drive, powerful output
UPS Uninterruptible Power Supply: Efficient AC-DC conversion, protects critical loads
PFC Power Factor Correction: High frequency, low loss, contributing to system energy efficiency
SIHB068N60EF-T1GE3-VB – High voltage, low resistance, easily handles high current, making your power supply design more efficient and reliable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
