SIHB065N65E-GE3-VB Product details
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VDS=600V: Suitable for three-phase 380V input and high-voltage DC-DC systems, providing ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage range, compatible with various high-voltage driver ICs and isolated drive solutions, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong dv/dt immunity, suitable for high-voltage bridge circuits, requires drive voltage >10V.
RDS(on)=62mΩ @ VGS=10V: Super Junction technology yields ultra-low on-resistance, greatly reducing full-load conduction losses, improving system efficiency and simplifying thermal design.
ID=41A: Ample continuous current margin, covering peak current requirements for 3kW-class PFC, LLC, and motor control applications, ensuring stable long-term operation.
Package TO263 (D2PAK): Large pad design enhances thermal conductivity and current handling capability, compatible with through-hole reflow soldering, suitable for compact layouts in medium-to-high power modules.
Domain and module applications:
High-Voltage DC-DC Converter: Low conduction loss combined with low gate charge improves heavy-load efficiency, suitable for communication power supplies and server power modules.
Power Factor Correction (PFC) Circuit: 600V withstand voltage paired with 62mΩ low resistance effectively suppresses bus voltage spikes after the rectifier bridge, improving THD and overall efficiency.
Photovoltaic Inverter and Energy Storage System: Super-junction technology reduces boost stage losses, enhances high-temperature reliability, suitable for string inverters and power conditioning systems.
Industrial Motor Drive: High-voltage bus direct drive simplifies topology, low switching losses support higher PWM frequency, optimizing motor operation smoothness and controller temperature rise.
Uninterruptible Power Supply (UPS): High surge current withstand capability and low conduction voltage drop meet the stringent requirements of online UPS bypass and inverter modules.
Electric Vehicle Charging Station Auxiliary Power Supply: Wide withstand voltage range and strong impact resistance adapt to the wide input voltage environment inside the charging station, improving auxiliary power supply reliability.
High-Voltage Switching Power Supply (SMPS): Used as the main switch in LLC half-bridge/full-bridge topology, balancing low loss and high reliability, aiding power module miniaturization.
Selection Summary: The SIHB065N65E-GE3-VB achieves 62mΩ low on-resistance and 41A high current carrying capability on a 600V withstand voltage platform, combined with the excellent heat dissipation characteristics of the TO263 package. It is a high-performance general-purpose choice for high-voltage, medium-to-high-power switching applications, particularly suitable for industrial and new energy projects with clear requirements for efficiency, thermal management, and long-term reliability.
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