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SIHB065N60E-T1-GE3-VB Product details
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Still troubled by heat and loss in high-voltage power supply designs? Let VBsemi SIHB065N60E solve your worries! This TO263-packaged N-MOS transistor, using super junction multi-epitaxial technology, withstands up to 600V while carrying 41A high current, with an on-resistance of only 62mΩ, maintaining extremely low loss in high-voltage scenarios like high-power switching power supplies and inverters. The SJ_Multi-EPI process delivers faster switching speed and better FOM value, helping engineers easily break through efficiency bottlenecks—a "performance powerhouse" for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 600V (Sufficient safety margin for high-voltage systems)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Standard level drive, reliable turn-on)
Ultra-Low On-Resistance: 62mΩ @ 10V (Significantly reduced conduction losses)
High Current Capability: 41A (Single device capable of high-power output)
Package: TO263 (Suitable for SMD soldering, excellent thermal performance)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, fast switching, low losses)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Standard level drive, reliable turn-on)
Ultra-Low On-Resistance: 62mΩ @ 10V (Significantly reduced conduction losses)
High Current Capability: 41A (Single device capable of high-power output)
Package: TO263 (Suitable for SMD soldering, excellent thermal performance)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, fast switching, low losses)
Domain and module applications：
– Six Major Hot Scenarios, One Tube Handles All
Switching Power Supply: Efficient LLC half-bridge/full-bridge topology improves overall conversion efficiency
Photovoltaic Inverter: MPPT and DC-AC stage high-power switching, stable and reliable
Electric Vehicle Charging Station: High-voltage DC conversion, impact-resistant, high-temperature resistant
UPS Uninterruptible Power Supply: High current switching, ensures critical loads remain powered
Motor Drive: Industrial variable frequency and servo control, fast response, abundant torque
High-Voltage DC-DC Converter: Communication power supplies, energy storage systems, enabling high power density modules
SIHB065N60E – High voltage, high current, low resistance, high efficiency, making your power supply design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
