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SIHB35N60ET5-GE3-VB Product details
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VBsemi SIHB35N60ET5-GE3-VB is a Single N-channel field-effect transistor, part of VBsemi's high-performance high-voltage power device series. This product utilizes advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, featuring extremely low on-resistance, high breakdown voltage, and excellent switching characteristics, suitable for various high-voltage, high-power power conversion and control applications. The device is packaged in TO263, offering good heat dissipation and reliability, ideal for industrial-grade environments requiring high power density and high-efficiency design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 80mΩ
- Max Drain Current (ID): 34A
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 80mΩ
- Max Drain Current (ID): 34A
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
1. **Switched-Mode Power Supply (SMPS)**: The SIHB35N60ET5-GE3-VB is suitable for the power switch stage of high-voltage input/output switching power supplies, such as server power supplies, communication power supplies, and industrial power modules. It enables efficient energy conversion at high frequencies and reduces system losses.
2. **Photovoltaic Inverters**: In photovoltaic power generation systems, this device can be used in the boost and inverter stages of DC-AC inverter circuits, withstanding a 600V bus voltage. Its low on-resistance helps improve overall conversion efficiency and reduce temperature rise.
3. **Uninterruptible Power Supply (UPS)**: Suitable for the rectifier/inverter power stage of online UPS, providing stable and reliable power switching capability to meet the high voltage, high current, and long-term operational reliability requirements of backup power systems.
4. **Electric Vehicle Charging Stations**: In the power module of DC charging stations, it can be used in AC-DC and DC-DC conversion circuits, supporting high-voltage bus design. The 34A high current output capability ensures high power density and fast charging performance of the charging system.
5. **Industrial Motor Drives**: Used in industrial variable frequency drives, servo drives, and motor control modules as a high-voltage power switching device to achieve motor start/stop, speed regulation, and energy feedback control, with excellent durability and surge resistance.
6. **High-Voltage DC-DC Converters**: In new energy vehicle on-board chargers (OBC), energy storage systems, and high-voltage DC bus converters, this model can serve as a secondary side rectifier or primary side switch, ensuring high efficiency and stability of the converter under high-voltage conditions.
7. **Power Protection and Distribution Systems**: Suitable for electronic switches and circuit protection circuits in smart grids and distribution automation equipment. Utilizing its high voltage rating and fast switching characteristics, it enables reliable circuit on/off control and fault isolation.
With its 600V high voltage withstand capability, low on-resistance down to 80mΩ, and 34A high current capability, combined with the performance advantages of super-junction multi-epitaxial technology, the VBsemi SIHB35N60ET5-GE3-VB provides an ideal solution for high-power, high-reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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