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SIHB35N60ET1-GE3-VB Product details
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Are you designing a high-power-density high-voltage power module but facing challenges with high switching tube conduction loss and heat dissipation pressure? Ordinary high-voltage MOSFETs either lack sufficient voltage withstand or have high on-resistance. VBsemi SIHB35N60ET1-GE3-VB is designed to solve this—it integrates 600V high withstand voltage, 34A high current carrying capacity, and low on-resistance of 80mΩ in a TO263 (D2PAK) package, allowing high-voltage, high-power designs to balance efficiency and reliability without compromising on heat generation and board space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Voltage Rating 600V, ample safety margin for high-voltage applications
- Gate Drive Range ±30V, strong compatibility, more flexible drive design
- Threshold Voltage 3.5V, effectively turns on with typical logic levels
- On-Resistance 80mΩ (at 10V drive), excellent conduction loss performance even at high voltage
- Maximum Current 34A, delivers substantial power even in TO263 package
- Utilizes SJ_Multi-EPI Superjunction Multi-Epitaxy technology, combining switching performance and low conduction loss
- Gate Drive Range ±30V, strong compatibility, more flexible drive design
- Threshold Voltage 3.5V, effectively turns on with typical logic levels
- On-Resistance 80mΩ (at 10V drive), excellent conduction loss performance even at high voltage
- Maximum Current 34A, delivers substantial power even in TO263 package
- Utilizes SJ_Multi-EPI Superjunction Multi-Epitaxy technology, combining switching performance and low conduction loss
Domain and module applications：
- Switching Power Supply / LLC Resonant Power Supply – Used as a high-voltage main switch tube, reducing conduction losses and temperature rise, improving overall efficiency.
- Photovoltaic Inverters – Handles high voltage and high current in DC-AC conversion, ensuring stable and reliable system operation.
- Electric Vehicle Charging Piles / Onboard Chargers – Utilizes 600V withstand voltage and low RDS(on) to cope with high-voltage bus surges and reduce thermal stress.
- Industrial Motor Drives – Acts as a power switching device, enabling precise high-power control and improving drive response speed.
- Uninterruptible Power Supplies (UPS) – Leverages low loss advantages in high-voltage bus conversion, extending backup time.
- Boost / Buck DC-DC Converters – Replaces traditional MOSFETs in synchronous rectification or PFC circuits, improving conversion efficiency.
- Power Factor Correction (PFC) Circuits – Combined with superjunction technology to reduce switching losses, helping achieve high power factor targets. One-sentence summary: SIHB35N60ET1-GE3-VB is not just an ordinary high-voltage MOS tube; it is the "efficiency engine" and "reliable cornerstone" for your high-voltage, high-power power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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