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SIHB33N60EFT1-GE3-VB Product details
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VBsemi SIHB33N60EFT1-GE3-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced SJ_Multi-EPI super junction technology, featuring a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, suitable for high-voltage, high-power power conversion and control applications. The product is packaged in TO263, offering good heat dissipation performance and high reliability, suitable for applications requiring high current carrying capacity and efficient switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 34A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 80mΩ
- Maximum Drain Current (ID): 34A
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 80mΩ
- Maximum Drain Current (ID): 34A
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxy)
Domain and module applications：
1. Switching Power Supply (SMPS): SIHB33N60EFT1-GE3-VB is suitable for power switch tubes in high-voltage switching power supplies, such as server power supplies, communication power supplies, and industrial power supplies, effectively improving conversion efficiency and reducing power consumption.
2. Photovoltaic Inverters: In photovoltaic power generation systems, this device can be used in the power stage of DC-AC inverter circuits, achieving efficient energy conversion and meeting high-voltage, high-current application requirements.
3. Electric Vehicle Charging Piles: Suitable for power conversion circuits in EV charging modules, capable of withstanding high-voltage and high-current surges, providing stable and reliable switching performance.
4. Motor Drive Control: This model can be used in the power output stage of industrial motor drives, inverters, and servo control systems, supporting motor control and speed regulation under a high-voltage bus.
5. UPS Uninterruptible Power Supplies: In the rectification and inverter stages of UPS, this device can function as a high-voltage power switch, ensuring stable system operation under harsh grid conditions.
6. High Voltage DC-DC Converters: Suitable for high-voltage DC conversion circuits, such as auxiliary power supplies for communication base stations and rail transit, meeting high-efficiency, high-reliability design requirements.
7. Industrial Power Electronics Equipment: Widely used in various high-voltage power electronic modules, such as power active filters, high-voltage relay replacement circuits, etc., improving overall system performance and lifespan.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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