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SIHB100N60E-T5-GE3-VB Product details
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SIHB100N60E-T5-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, adopting SJ_Multi-EPI (Super Junction Multi-Layer Epitaxial) technology, achieving an excellent balance between on-resistance and switching speed. The TO263 package has good heat dissipation and current carrying capabilities, suitable for medium-to-high-power power conversion applications. The combination of 600V withstand voltage, 31A current carrying capacity, and 90mΩ on-resistance makes it a preferred device for balancing efficiency and reliability in topologies such as high-voltage DC-DC converters, inverters, and PFC circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 31A | 90(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VDS=600V: Suitable for three-phase industrial power, photovoltaic bus, and high-voltage DC systems, providing ample voltage margin to reduce avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage tolerance, compatible with various driver ICs and gate drive circuits, simplifying protection design.
Vth=3.5V (Typical): Moderate threshold voltage, strong noise immunity, supports standard 10V~15V gate drive levels.
RDS(on)=90mΩ @ VGS=10V: Superjunction structure significantly reduces conduction losses, lower temperature rise under heavy load, reducing heatsink size.
ID=31A: Strong continuous current capability, suitable for high power density modules and high current switching loops.
Package TO263: Low thermal resistance, easy PCB soldering, compatible with standard SMT processes, balancing thermal performance and manufacturing convenience.
Domain and module applications：
Switching Power Supply (SMPS): Achieves efficient power conversion under high-voltage bus input, low conduction loss improves overall efficiency, suitable for 300W~1kW level power supplies.
PFC Power Factor Correction: Superjunction technology reduces switching losses, supports high-frequency operation, reduces magnetic component size, and increases power density.
High Voltage DC-DC Converters: Maintains stable switching characteristics over a wide input voltage range, suitable for communication power supplies, server power supplies, and industrial module power supplies.
Photovoltaic Inverters: 600V withstand voltage matches photovoltaic string voltage, low RDS(on) reduces conduction losses, improving MPPT efficiency.
Motor Drives and Inverters: Reliably handles bus voltage spikes, high current capability meets industrial motor drive requirements, enhancing system stability.
Electric Vehicle Chargers and Auxiliary Power Supplies: High voltage withstand and robust package suit the vehicle bus environment, stable performance over a wide temperature range.
Uninterruptible Power Supplies (UPS): High-frequency switching and low loss characteristics improve overall efficiency, aiding miniaturization and lightweight design. Selection Summary: SIHB100N60E-T5-GE3-VB achieves a balanced optimization between high voltage withstand, on-resistance, current capability, and package heat dissipation, making it a cost-effective general-purpose choice in the 600V high-voltage power switch field, especially suitable for power supply and industrial application projects with strict requirements on efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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