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SIHB100N60E-T1-GE3-VB Product details
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SIHB100N60E-T1-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, adopting SJ_Multi-EPI (Multi-Layer Epitaxial Super Junction) technology, achieving 90mΩ-level on-resistance on a 600V withstand voltage platform, combining low conduction loss and high switching speed. The TO263 package has excellent heat dissipation and current carrying capabilities, making it very suitable for applications with strict reliability requirements such as industrial power supplies, charging stations, and photovoltaic inverters. The combination of 31A continuous current and 600V high withstand voltage makes it an ideal power stage choice for high-voltage, high-frequency switching power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 31A | 90(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VDS=600V: Covers three-phase 380V input and PFC boost bus voltage, suitable for industrial power grid environments, with sufficient peak margin to effectively reduce avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage window, compatible with standard gate driver ICs and optocoupler isolated drivers, offering stronger immunity to Miller effect false turn-on.
Vth=3.5V (Typical): Moderate threshold voltage, good noise immunity, ensures full conduction under 10V drive, suitable for industrial control signals.
RDS(on)=90mΩ @ VGS=10V: Low on-resistance achieved by superjunction technology, significantly reducing high-voltage conduction losses compared to conventional planar structures, lowering full-load temperature rise and simplifying thermal design.
ID=31A: High current capability in TO263 package, supporting kilowatt-level power conversion, meeting high power density design requirements.
Package TO263: Compatible with standard SMD reflow soldering, thermal pad design reduces thermal resistance, suitable for metal substrate or widened copper foil thermal solutions, enhancing long-term reliability.
VGS=±30V: Wide gate drive voltage window, compatible with standard gate driver ICs and optocoupler isolated drivers, offering stronger immunity to Miller effect false turn-on.
Vth=3.5V (Typical): Moderate threshold voltage, good noise immunity, ensures full conduction under 10V drive, suitable for industrial control signals.
RDS(on)=90mΩ @ VGS=10V: Low on-resistance achieved by superjunction technology, significantly reducing high-voltage conduction losses compared to conventional planar structures, lowering full-load temperature rise and simplifying thermal design.
ID=31A: High current capability in TO263 package, supporting kilowatt-level power conversion, meeting high power density design requirements.
Package TO263: Compatible with standard SMD reflow soldering, thermal pad design reduces thermal resistance, suitable for metal substrate or widened copper foil thermal solutions, enhancing long-term reliability.
Domain and module applications：
Switching Power Supply (SMPS): 600V withstand voltage combined with low RDS(on) improves conversion efficiency and reduces power tube temperature rise in flyback or LLC topologies.
PFC Power Factor Correction Circuit: Superjunction structure enhances hard-switching performance, resulting in lower losses in Continuous Conduction Mode (CCM), suitable for the 1kW~3kW power range.
Photovoltaic Inverters: High-voltage bus supports the DC boost stage, low on-resistance reduces DC-AC conversion losses, helping to improve grid-connected power generation efficiency.
Energy Storage Converters (PCS): Reliable operation in bidirectional DC-DC topologies, 31A high current meets charge/discharge energy management needs, enhancing system overload capability.
Industrial Motor Drives: The built-in freewheeling diode combined with low switching losses makes it applicable to 380V AC motor variable frequency drives, improving motor noise and temperature rise.
Electric Vehicle Charging Modules: Acts as the main switch in auxiliary power supplies and DC-DC stages of high-voltage, high-power charging piles; excellent thermal performance supports long-term full-load operation.
UPS Uninterruptible Power Supplies: Replaces older planar MOSFETs in inverter bridge arms, improving overload capability and overall efficiency, extending battery backup time.
Selection Summary: SIHB100N60E-T1-GE3-VB achieves a balance between ultra-low on-resistance and high current carrying capacity on a 600V high-voltage platform. The TO263 package balances heat dissipation and process compatibility, making it a cost-effective general-purpose choice for high-performance, high-reliability high-voltage switching applications, especially suitable for projects with strict requirements on power density and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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