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SIHB24N65EFT5-GE3-VB Product details

Product introduction:

VBsemi SIHB24N65EFT5-GE3-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, featuring extremely low on-resistance and excellent switching characteristics, suitable for high-voltage, high-power power conversion and control applications. The device has a drain-source voltage (VDS) of 600V, supports a gate-source voltage (VGS) of ±30V, and a typical threshold voltage (Vth) of 3.5V. The product is packaged in TO263, offering good heat dissipation and overcurrent capability, suitable for designs requiring high reliability and high power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 600V 3.5V 25A 110(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 600V 3.5V 25A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 600V 3.5V 25A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 120mΩ
- Maximum Drain Current (ID): 25A
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxy)

Domain and module applications:


1. Switching Power Supply (SMPS): SIHB24N65EFT5-GE3-VB is suitable for PFC (Power Factor Correction) and high-voltage DC-DC conversion circuits in efficient switching power supplies, significantly reducing switching and conduction losses, improving overall power supply efficiency.
2. Photovoltaic Inverters: In photovoltaic power generation systems, this device can be used as a high-frequency switching tube in inverters for DC-AC energy conversion, withstanding 600V high voltage and handling large currents, ensuring stable and reliable system operation.
3. Charging Piles and Onboard Power Supplies: Suitable for power modules in EV charging piles and onboard DC-DC converters, leveraging low on-resistance and high current capability for efficient power transmission and thermal management.
4. Industrial Motor Drives: Used in the output stage of three-phase industrial motor variable frequency drives and servo controllers, enabling efficient motor speed regulation and precise control, meeting high-voltage, high-power application requirements.
5. UPS Uninterruptible Power Supplies: In the inverter and bypass circuits of UPS, this MOSFET can serve as a key switching device, providing reliable power switching and overload protection capability.
6. High Voltage Battery Protection and Energy Storage Systems: Suitable for charge/discharge switch control in Power Conversion Systems (PCS) and high-voltage battery management systems, ensuring system safety and long life.
7. High-Frequency Induction Heating and High-Power Power Electronic Equipment: Its fast switching characteristics and low gate charge help reduce drive losses, suitable for high-voltage, high-frequency applications such as RF power supplies, welders, and induction heating.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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