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SIHB125N60EF-T1GE3-VB Product details
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SIHB125N60EF-T1GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, adopting SJ_Multi-EPI super junction technology, achieving an excellent balance between on-resistance and switching speed. The TO263 package has excellent heat dissipation and current carrying capabilities, suitable for medium-to-high-power power supplies and industrial control applications. The combination of 600V withstand voltage, 25A current carrying capacity, and 120mΩ on-resistance makes it an ideal choice for balancing efficiency and reliability in high-voltage, high-frequency hard-switching topologies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 25A | 110(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VDS=600V: Covers high-voltage bus scenarios such as three-phase rectification, PFC boost, and inverters, ample voltage margin to effectively handle surge spikes.
VGS=±30V: Large gate drive margin, compatible with various PWM controllers and driver ICs, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong noise immunity, suitable for industrial drive environments, preventing false turn-on.
RDS(on)=120mΩ @ VGS=10V: Low conduction losses achieved by superjunction technology, controllable temperature rise under heavy load, reducing heatsink specifications.
ID=25A: Ample continuous current capability, meeting steady-state and transient demands of high-current loads such as motor drives and power conversion.
Package TO263: Low thermal resistance, solderable to PCB copper heat dissipation area, balancing power density and manufacturing convenience, suitable for mass production.
Domain and module applications：
Switching Power Supply (SMPS): Used in LLC half-bridge, active PFC, and flyback main switches, low Qg and low RDS(on) synergistically improve overall efficiency.
Industrial Motor Drives: 600V withstand voltage covers three-phase 380V input, 25A current margin handles stall and surge loads, high reliability.
Photovoltaic Inverters: Both MPPT boost stage and H-bridge inverter require high-voltage, low-loss MOSFETs; superjunction technology reduces conversion losses and improves power generation revenue.
UPS Uninterruptible Power Supplies: Provides stable switching capability in battery boost and inverter output stages, surge immunity ensures long-term operation in harsh grid environments.
EV Charging Modules: Main switch for high-voltage DC-DC converters, supports high-frequency design, helping to increase power density of charging modules.
Welding/Cutting Power Supplies: High-frequency inverter main power stage requires fast switching and low losses; SIHB125N60EF can significantly reduce temperature rise and extend equipment life.
High Voltage Auxiliary Power Supplies: Suitable for wide input voltage scenarios like industrial control and instrumentation power supply, voltage margin ensures system safety and stability. Selection Summary: SIHB125N60EF-T1GE3-VB, with its superjunction process, 600V high-voltage platform, and TO263 high-current package, provides an efficient, reliable, and easy-to-use solution for high-voltage power conversion, especially suitable for industrial and energy applications with strict requirements on efficiency, temperature rise, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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